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Numéro de référence | 2SA1742 | ||
Description | Silicon PNP Power Transistors | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1742
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO= -60V(Min)
·High DC Current Gain-
: hFE= 100(Min)@ (VCE= -2V , IC= -1A)
·Low Saturation Voltage-
: VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A)
APPLICATIONS
·This type of power transistor is developed for high-speed
switching and features a high hFE at low VCE(sat),which is
ideal for use as a driver in DC/DC converters and actuators.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-7.0 V
IC Collector Current-Continuous
-7.0 A
ICM Collector Current-Pulse
-12 A
IB Base Current-Continuous
-2.5 A
Total Power Dissipation @TC=25℃
25
PT
Total Power Dissipation @Ta=25℃
2.0
W
TJ Junction Temperature
Tstg Storage Temperature
150
-55~150
℃
℃
isc website: www.iscsemi.com
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ 2SA1742 ] |
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