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2SA1015 fiches techniques PDF

Inchange Semiconductor - Silicon PNP Power Transistors

Numéro de référence 2SA1015
Description Silicon PNP Power Transistors
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SA1015 fiche technique
INCHANGE Semiconductor
isc Silicon PNP Transistor
isc Product Specification
2SA1015
DESCRIPTION
·High Voltage and High Current
Vceo=-50V(Min.),Ic=-150mA(Max)
·Excellent hFE Linearity
·Low Noise
·Complement to Type 2SC1815
APPLICATIONS
·Audio frequency general purpose amplifier Applications
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Curren
IB Base Curren
PC
Collector Power Dissipation
@TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
VALUE
UNIT
-50 V
-50 V
-5 V
-150
mA
-50 mA
400 mW
125
-55~125
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark

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