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Numéro de référence | 2SA1015 | ||
Description | Silicon PNP Power Transistors | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
INCHANGE Semiconductor
isc Silicon PNP Transistor
isc Product Specification
2SA1015
DESCRIPTION
·High Voltage and High Current
Vceo=-50V(Min.),Ic=-150mA(Max)
·Excellent hFE Linearity
·Low Noise
·Complement to Type 2SC1815
APPLICATIONS
·Audio frequency general purpose amplifier Applications
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Curren
IB Base Curren
PC
Collector Power Dissipation
@TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
VALUE
UNIT
-50 V
-50 V
-5 V
-150
mA
-50 mA
400 mW
125 ℃
-55~125
℃
isc website: www.iscsemi.com
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ 2SA1015 ] |
No | Description détaillée | Fabricant |
2SA101 | (2SA100 - 2SA104) Ge PNP Drift | ETC |
2SA1010 | SILICON POWER TRANSISTOR | NEC |
2SA1010 | Silicon POwer Transistors | SavantIC |
2SA1010 | Trans GP BJT PNP 100V 7A 3-Pin(3+Tab) MP-25 | New Jersey Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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