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Inchange Semiconductor - Silicon PNP Power Transistors

Numéro de référence 2N3741R
Description Silicon PNP Power Transistors
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2N3741R fiche technique
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
2N3741R
DESCRIPTION
·DC Current Gain-
: hFE= 30-100@IC= -250mA
·Wide Area of Safe Operation
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.6 V(Max)@ IC = -1A
·High Gain
·Low Saturation Voltage
APPLICATIONS
·Designed for use as drivers, switches and medium-power
amplifier and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80 V
VCEO
VEBO
IC
ICM
IB
PC
Tstg
Collector-Emitter Voltage
-80 V
Emitter-Base Voltage
-7 V
Collector Current-Continuous
-4 A
Collector Current-Peak
-10 A
Base Current
-2 A
Collector Power Dissipation@TC=25
25
W
Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
7.0
UNIT
/W
isc websitewww.iscsemi.com1
isc & iscsemi is registered trademark

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