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دیتاشیت - STMicroelectronics - High power NPN epitaxial planar bipolar transistor

شماره قطعه D1047
شرح مفصل High power NPN epitaxial planar bipolar transistor
تولید کننده STMicroelectronics 
آرم STMicroelectronics 


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D1047 شرح
2SD1047
High power NPN epitaxial planar bipolar transistor
Features
High breakdown voltage VCEO = 140 V
Typical ft = 20 MHz
Fully characterized at 125 oC
Application
Power supply
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2SD1047
April 2011
Marking
2SD1047
Package
TO-3P
Doc ID 018729 Rev 1
Packaging
Tube
1/10
www.st.com
10

قانون اساسیصفحه 10
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