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Numéro de référence | D1047 | ||
Description | High power NPN epitaxial planar bipolar transistor | ||
Fabricant | STMicroelectronics | ||
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1 Page
2SD1047
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage VCEO = 140 V
■ Typical ft = 20 MHz
■ Fully characterized at 125 oC
Application
■ Power supply
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2SD1047
April 2011
Marking
2SD1047
Package
TO-3P
Doc ID 018729 Rev 1
Packaging
Tube
1/10
www.st.com
10
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Pages | Pages 10 | ||
Télécharger | [ D1047 ] |
No | Description détaillée | Fabricant |
D1046 | NPN Transistor - 2SD1046 | Sanyo Semicon Device |
D1047 | NPN Transistor - 2SD1047 | Sanyo Semicon Device |
D1047 | High power NPN epitaxial planar bipolar transistor | STMicroelectronics |
D1048 | NPN Transistor - 2SD1048 | Sanyo Semiconductor |
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