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PDF BAW100G Data sheet ( Hoja de datos )
| Número de pieza | BAW100G | |
| Descripción | SILICON SWITCHING DIODES | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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BAW100
BAW100G
SURFACE MOUNT
DUAL, ISOLATED HIGH SPEED
SILICON SWITCHING DIODES
SOT-143 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BAW100 and
BAW100G each consist of two electrically isolated high
speed silicon switching diodes packaged in an epoxy
molded SOT-143 surface mount case. This device is
designed for high speed switching applications.
• The BAW100G is Halogen Free by design.
MARKING CODES:
BAW100: CJSS
BAW100G: CJSG
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0ms
Peak Forward Surge Current, tp=1.0ms
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IF
IFRM
IFSM
IFSM
IFSM
PD
TJ, Tstg
ΘJA
75
85
250
500
4.0
2.0
1.0
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN MAX
IR
IR
IR
BVR
VF
VF
VF
VF
CT
trr
VR=25V, TA=150°C
VR=75V
VR=75V, TA=150°C
IR=100μA
85
IF=1.0mA
IF=10mA
IF=50mA
IF=150mA
VR=0, f=1.0MHz
IF=IR=10mA, RL=100Ω, Rec. to 1.0mA
30
1.0
50
715
855
1.00
1.25
2.0
6.0
UNITS
V
V
mA
mA
A
A
A
mW
°C
°C/W
UNITS
μA
μA
μA
V
mV
mV
V
V
pF
ns
R4 (20-November 2009)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet BAW100G.PDF ] | |
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