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Numéro de référence | 2N6724 | ||
Description | SILICON NPN DARLINGTON POWER TRANSISTORS | ||
Fabricant | Central Semiconductor | ||
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1 Page
2N6724
2N6725
SILICON
NPN DARLINGTON
POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6724 and
2N6725 are silicon NPN Darlington power transistors
designed for amplifier applications.
MARKING: FULL PART NUMBER
TO-237 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Continuous Base Current
IB
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
JC
2N6724
50
2N6725
60
40 50
12
2.0
0.5
2.0
-65 to +150
62.5
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL TEST CONDITIONS
ICBO
VCB=30V
ICBO
VCB=40V
IEBO
VEB=10V
BVCBO
IC=1.0μA
BVCES
IC=1.0mA
BVEBO
IE=10μA
VCE(SAT) IC=1.0A, IB=2.0mA
VBE(ON)
VCE=5.0V, IC=1.0A
hFE VCE=5.0V, IC=200mA
hFE VCE=5.0V, IC=1.0A
fT VCE=5.0V, IC=200mA, f=100MHz
Cob VCB=10V, IE=0, f=1.0MHz
2N6724
MIN MAX
- 100
--
- 100
50 -
40 -
12 -
- 1.5
- 2.0
25K -
4K 40K
100 1K
- 10
2N6725
MIN MAX
--
- 100
- 100
60 -
50 -
12 -
- 1.5
- 2.0
25K -
4K 40K
100 1K
- 10
UNITS
V
V
V
A
A
W
°C
°C/W
UNITS
nA
nA
nA
V
V
V
V
V
MHz
pF
R1 (31-July 2013)
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Pages | Pages 7 | ||
Télécharger | [ 2N6724 ] |
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