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2N7002KU fiches techniques PDF

GOOD-ARK - N-Channel MOSFET

Numéro de référence 2N7002KU
Description N-Channel MOSFET
Fabricant GOOD-ARK 
Logo GOOD-ARK 





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2N7002KU fiche technique
Main Product Characteristics
VDSS
60V
RDS(on) 3Ω(max.)
ID 0.3A
Features and Benefits
SOT-23
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
ESD Rating2000V HBM
150operating temperature
Lead free product
2N7002KU
60V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Thermal Resistance
Max.
0.3
1.2
0.63
60
± 20
-55 to +150
Symbol
RθJA
Characteristics
Junction-to-ambient (t ≤ 10s)
Typ.
Max.
200
Units
A
W
V
V
°C
Units
/W
www.goodark.com
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Rev.1.0

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