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Número de pieza | 2N7002KG | |
Descripción | N-Ch Small Signal MOSFET | |
Fabricantes | SeCoS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N7002KG (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Elektronische Bauelemente
2N7002KG
190 mA, 60 V, RDS(ON) = 2 Ω
N-Ch Small Signal MOSFET with Gate Protection
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
z 2 kV ESD Protection
z Lower On-resistance: 2 Ω
z Low Threshold: 2 V (Typ.)
z Low Input Capacitance: 25 pF
z Fast Switching Performance: 25 nS
z Low Input and Output Leakage
APPLICATIONS
z Direct Logic-Level Interface:
TTL/CMOS
z Drivers: Relays, Solenoids, Lamps,
Hammers, Display, Memories,
Transistors, etc.
z Battery Operated Systems
z Solid-State Relays
PACKAGE INFORMATION
Weight: 0.07800g (Approximately)
1
Gate
Drain
3
2
Source
SOT-23
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
MARKING CODE
K7K
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Continuous Drain Current2
Pulsed Drain Current1
Power Dissipation2
VDS
VGS
ID
IDM
PD
Thermal Resistance
Junction-Ambient
Max. RθJA
Operating Junction and
Storage Temperature
TJ, TSTG
Notes:
1. Pulse width limited by maximum junction temperature.
2. Surface mounted on FR4 board.
Ratings
N-Ch
60
±20
300
190
800
0.35
0.14
350
-55 ~ +150
Unit
V
mA
W
°C/W
°C
Test Conditions
@TA=25°C
@TA=100°C
@TA=25°C
@TA=100°C
01-December-2008 Rev. B
Page 1 of 5
1 page Elektronische Bauelemente
CHARACTERISTIC CURVE (N-Ch, cont’d)
2N7002KG
190 mA, 60 V, RDS(ON) = 2 Ω
N-Ch Small Signal MOSFET with Gate Protection
01-December-2008 Rev. B
Page 5 of 5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet 2N7002KG.PDF ] |
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