PDF RHD5912 Data sheet ( Hoja de datos )

Número de pieza	RHD5912
Descripción	Quad Comparator
Fabricantes	Cobham Semiconductor
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No Preview Available ! RadHard-by-Design Analog RHD5912 Quad Comparator, Open Drain Outputs Released Datasheet Cobham.com/HiRel March 28, 2016 The most important thing we build is trust FEATURES  Single power supply operation at 3.3V or 5.0V  Radiation performance - Total dose: - ELDRS Immune - SEL Immune - Neutron Displacement Damage > 1 Mrad(Si); Dose rate = 50-300 rad(Si)/s > 100 MeV-cm2/mg > 1014 neutrons/cm2  Short Circuit Tolerant  Full military temperature range  Designed for aerospace and high reliability space applications  Packaging – Hermetic ceramic SOIC - 16-pin, .417"L x .300"W x .120"Ht - Weight - 0.8 grams max  Radiation Hardness Assurance Plan: DLA Certified to MIL-PRF-38534, Appendix G. GENERAL DESCRIPTION The RHD5912 is a radiation hardened, single supply, quad comparator with open drain outputs in a 16-pin SOIC package. The RHD5912 design uses specific circuit topology and layout methods to mitigate total ionizing dose effects and single event latchup. These characteristics make the RHD5912 especially suited for the harsh environment encountered in Deep Space missions. It is guaranteed operational from -55°C to +125°C. Available screened in accordance with MIL-PRF-38534 Class K, the RHD5912 is ideal for demanding military and space applications. ORGANIZATION AND APPLICATION The RHD5912 quad comparator is intended for operation with dynamic signals on either or both inputs. Comparison is ’continuous’, that is, the circuit functions as high gain open loop amplifiers with a digital output. For slow input signals with small input differences the comparators can be expected to respond to small noise signals at the inputs. Although there is internal hysteresis, feedback hysteresis is the responsibility of the user to avoid ’chattering’ on system noise. The comparator will accept signals anywhere in the included power supply range. The circuit delay is specified for a half-volt single ended or differential input step of either polarity ending in an input polarity reversal of 10mV. See Switching Diagrams. CMOS device drive has a negative temperature coefficient and the devices are therefore inherently tolerant to momentary shorts, although on chip thermal shutdown is not provided. All inputs and outputs are diode protected The devices will not latch with SEU events above 100 Mev-cm2/mg. Total dose degradation is minimal to above 1 Mrad(Si). Displacement damage environments to neutron fluence equivalents in the mid 1014 neutrons per cm2 range are readily tolerated. There is no sensitivity to low-dose rate (ELDRS) effects. SEU effects are application dependent. SCD5912 Rev D 1 Cobham Semiconductor Solutions www.cobham.com/HiRel 1 page Threshold Voltage VTH = VccR-----1--R--+---2--R-----2- Hysteresis Calculation HYS = VOR-----2--R--+---2--R-----3- VCC R1 VTH R2 VCC R4 Open Drain Pull-up VO R3 APPLICATION NOTE 1: HYSTERESIS SCD5912 Rev D 3/28/2016 Note: Package and lid are electrically isolated from signal pads. FIGURE 5: PACKAGE OUTLINE 5 Cobham Semiconductor Solutions www.cobham.com/HiRel 5 Page

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