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دیتاشیت - Analog Devices - High Voltage Isolated IGBT Gate Driver

شماره قطعه ADuM4135
شرح مفصل High Voltage Isolated IGBT Gate Driver
تولید کننده Analog Devices 
آرم Analog Devices 


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ADuM4135 شرح
Data Sheet
Single-/Dual-Supply, High Voltage Isolated
IGBT Gate Driver with Miller Clamp
ADuM4135
FEATURES
GENERAL DESCRIPTION
4 A peak drive output capability
Output power device resistance: <1 Ω
Desaturation protection
Isolated desaturation fault reporting
Soft shutdown on fault
Miller clamp output with gate sense input
Isolated fault and ready functions
Low propagation delay: 55 ns typical
Minimum pulse width: 50 ns
The ADuM4135 is a single-channel gate driver specifically
optimized for driving insulated gate bipolar transistors (IGBTs).
Analog Devices, Inc., iCoupler® technology provides isolation
between the input signal and the output gate drive.
The ADuM4135 includes a Miller clamp to provide robust
IGBT turn-off with a single-rail supply when the gate voltage
drops below 2 V. Operation with unipolar or bipolar secondary
supplies is possible, with or without the Miller clamp operation.
Operating temperature range: −40°C to +125°C
The Analog Devices chip scale transformers also provide
Output voltage range to 30 V
isolated communication of control information between the
Input voltage range from 2.3 V to 6 V
high voltage and low voltage domains of the chip. Information
Output and input undervoltage lockout (UVLO)
on the status of the chip can be read back from dedicated
Creepage distance: 7.8 mm minimum
outputs. Control of resetting the device after a fault on the
100 kV/µs common-mode transient immunity (CMTI)
20 year lifetime for 600 V rms or 1092 V dc working voltage
Safety and regulatory approvals (pending)
5 kV ac for 1 minute per UL 1577
CSA Component Acceptance Notice 5A
DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
VIORM = 849 V peak (reinforced/basic)
APPLICATIONS
secondary is performed on the primary side of the device.
Integrated onto the ADuM4135 is a desaturation detection
circuit that provides protection against high voltage short-
circuit IGBT operation. The desaturation protection contains
noise reducing features such as a 300 ns masking time after a
switching event to mask voltage spikes due to initial turn-on.
An internal 500 µA current source allows low device count and
the internal blanking switch allows the addition of an external
MOSFET/IGBT gate drivers
current source if more noise immunity is needed.
PV inverters
Motor drives
Power supplies
The secondary UVLO is set to 11 V with common IGBT
threshold levels taken into consideration.
FUNCTIONAL BLOCK DIAGRAM
VSS1 1
VI+ 2
VI3
READY 4
1
FAULT 5
1
ADuM4135
UVLO
MASTER
LOGIC
PRIMARY
ENCODE
RESET 6
VDD1 7
VSS1 8
1
1
1
DECODE
NOTES
1. GROUNDS ON PRIMARY AND SECONDARY SIDE ARE
ISOLATED FROM EACH OTHER.
TSD
CLAMP
LOGIC
2V
2
DECODE
ENCODE
MASTER
LOGIC
SECONDARY
2
9V
2
UVLO
16 VSS2
2
15 GATE_SENSE
14 VOUT_ON
13 VDD2
12 VOUT_OFF
11 GND2
10 DESAT
9 VSS2
2
Figure 1.
Rev. B
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2015–2016 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com

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