DataSheetWiki


EKI04047 fiches techniques PDF

SANKEN - N Channel Trench Power MOSFET

Numéro de référence EKI04047
Description N Channel Trench Power MOSFET
Fabricant SANKEN 
Logo SANKEN 





1 Page

No Preview Available !





EKI04047 fiche technique
40 V, 80 A, 4.1 mΩ Low RDS(ON)
N ch Trench Power MOSFET
EKI04047
Features
V(BR)DSS --------------------------------- 40 V (ID = 100 µA)
ID ---------------------------------------------------------- 80 A
RDS(ON) ----------5.2 mΩ max. (VGS = 10 V, ID = 42.8 A)
Qg------16.0 nC (VGS = 4.5 V, VDS = 20 V, ID = 42.8 A)
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Package
TO-220
(4)
D
(1) (2) (3)
GDS
Applications
DC-DC converters
Synchronous Rectification
Power Supplies
Equivalent circuit
D(2)(4)
G(1)
S(3)
Not to scale
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Drain to Source Voltage
VDS
Gate to Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
IDM
IS
ISM
Single Pulse Avalanche Energy
EAS
Avalanche Current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
IAS
PD
TJ
TSTG
Test conditions
TC = 25 °C
PW 100µs
Duty cycle 1 %
PW 100µs
Duty cycle 1 %
VDD = 20 V, L = 1 mH,
IAS = 9.4 A, unclamped,
RG = 4.7 Ω
Refer to Figure 1
TC = 25 °C
Rating
40
± 20
80
161
80
161
89
16.7
90
150
55 to 150
Unit
V
V
A
A
A
A
mJ
A
W
°C
°C
EKI04047-DS Rev.1.3
May. 29, 2014
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp
1

PagesPages 9
Télécharger [ EKI04047 ]


Fiche technique recommandé

No Description détaillée Fabricant
EKI04047 N Channel Trench Power MOSFET SANKEN
SANKEN

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche