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Número de pieza | DMT10H015LCG | |
Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
Fabricantes | Diodes | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DMT10H015LCG (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! DMT10H015LCG
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
100V
RDS(ON) Max
15mΩ @ VGS = 10V
19.5mΩ @ VGS = 6V
ID
TC = +25°C
34A
32A
Description and Applications
This new generation N-Channel Enhancement Mode MOSFET is
designed to minimize RDS(ON) and yet maintain superior switching
performance. This device is ideal for use in Notebook battery power
management and Loadswitch..
Backlighting
Power Management Functions
DC-DC Converters
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test in Production
High Conversion Efficiency
Low RDS(ON) – Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: V-DFN3333-8 (Type B)
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.027 grams (Approximate)
Top View
Pin 1
S
S
S
G
D
D DD
Bottom View
D
Top View
Internal Schematic
G
S
Equivalent circuit
Ordering Information (Note 4)
Notes:
Part Number
DMT10H015LCG-7
DMT10H015LCG-13
Case
V-DFN3333-8 (Type B)
V-DFN3333-8 (Type B)
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
T10 = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 to 53)
DMT10H015LCG
Document number: DS38362 Rev. 3 - 2
1 of 7
www.diodes.com
June 2016
© Diodes Incorporated
1 page DMT10H015LCG
1
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.7
D=0.9
0.01
D=0.02
D=0.01
D=0.005
D=Single Pulse
0.001
1E-05
0.0001
RθJA(t) = r(t) * RθJA
RθJA = 120℃/W
Duty Cycle, D = t1 / t2
0.001
0.01 0.1
1
t1, PULSE DURATION TIME (sec)
10
Figure 13. Transient Thermal Resistance
100
1000
DMT10H015LCG
Document number: DS38362 Rev. 3 - 2
5 of 7
www.diodes.com
June 2016
© Diodes Incorporated
5 Page |
Páginas | Total 7 Páginas | |
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DMT10H015LCG | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
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