|
|
Numéro de référence | 50S380CE | ||
Description | Power Transistor | ||
Fabricant | Infineon | ||
Logo | |||
IPD50R380CE
MOSFET
500VCoolMOSªCEPowerTransistor
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Applications
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
550
V
RDS(on),max
0.38
Ω
ID 14.1 A
Qg,typ
24.8
nC
ID,pulse
32.4
A
Eoss @ 400V
2.54
µJ
Type/OrderingCode
IPD50R380CE
Package
PG-TO 252
Marking
50S380CE
DPAK
tab
2
1
3
Gate
Pin 1
Drain
Pin 2
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.3,2016-06-13
|
|||
Pages | Pages 13 | ||
Télécharger | [ 50S380CE ] |
No | Description détaillée | Fabricant |
50S380CE | Power Transistor | Infineon |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |