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PDF TGA2214 Data sheet ( Hoja de datos )
| Número de pieza | TGA2214 | |
| Descripción | 2 to 18 GHz 5W GaN Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Applications
Test Equipment
Electronic Warfare
Military Radar
TGA2214
2 to 18 GHz 5W GaN Power Amplifier
Product Features
Frequency Range: 2 - 18 GHz
Pout: > 37 dBm at PIN = 23 dBm
PAE: > 20 % at Pin = 23 dBm
Large Signal Gain (Pin = 23 dBm): > 14 dB
Small Signal Gain: > 22 dB
Return Loss: > 7 dB
Bias: VD = 22 V, IDQ = 450 mA, VG = -2.3 V Typical
Chip Dimensions: 3 x 5 x 0.10 mm
Performance under CW operation
Functional Block Diagram
23
1
65
4
General Description
TriQuint’s TGA2214 is a wideband power amplifier
fabricated on TriQuint’s TQGaN15 GaN on SiC process.
The TGA2214 operates from 2 – 18 GHz and achieves
5 W of saturated output power with 14 dB of large signal
gain and greater than 20% power-added efficiency .
This combination of wideband power, gain and efficiency
provides system designers the flexibility to improve
system performance while reducing size and cost.
The TGA2214 is matched to 50 Ω with integrated DC
blocking capacitors on both RF ports simplifying system
integration; it is ideally suited for electronic warfare, test
instrumentation and radar applications across both
military and commercial markets.
Lead free and RoHS compliant.
Evaluation Boards are available upon request.
Pad Configuration
Pad No.
1
2
3
4
5
6
Symbol
RFIN
VG1
VG2
RFOUT
VD2
VD1
Ordering Information
Part
TGA2214
ECCN Description
3A001.b.2.c
2 - 18 GHz 5W GaN
Power Amplifier
Preliminary Datasheet: 01-26-15
© 2014 TriQuint
- 1 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
1 page  
TGA2214
2 to 18 GHz 5W GaN Power Amplifier
Typical Performance: Large Signal
Conditions unless otherwise specified: VD = 22 V, IDQ = 450 mA, VG = -2.3 V, CW .
Output Power vs. Input Power vs. Temp.
40
Frequency = 10 GHz
38
Output Power vs. Input Power vs. Freq.
40
Temp = 25 °C
38
36 36
34
-40 °C
32
25 °C
85 °C
30
34
2 GHz
6 GHz
32
10 GHz
14GHz
30 18GHz
28
8
12 16 20 24
Input Power (dBm)
28
28
8
12 16 20 24
Input Power (dBm)
28
40 Output Power vs. Frequency vs. VD
39
38
37
20 V
22 V
36
Temp = 25 °C, Pin = 23 dBm
35
2 4 6 8 10 12 14 16 18
Frequency (GHz)
Output Power vs. Frequency vs. Temp.
40
39
38
37
-40 °C
25 °C
36 85 °C
Pin = 23 dBm
35
2 4 6 8 10 12 14 16 18
Frequency (GHz)
40 Output Power vs. Frequency vs. IDQ
39
38
37
225 mA
450 mA
36
Pin = 23 dBm, Temp = 25 °C
35
2 4 6 8 10 12 14 16 18
Frequency (GHz)
Preliminary Datasheet: 01-26-15
© 2014 TriQuint
- 5 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
5 Page 
Mechanical Information
TGA2214
2 to 18 GHz 5W GaN Power Amplifier
Units: millimeters
Thickness: 0.10
Die x,y size tolerance: ± 0.050
Ground is backside of die
Pad Description
Pad No.
1
2, 3
4
5, 6
Symbol
RFIN
VG (1)
RFOUT
VD (2)
Notes:
1. Pads 2 & 3 may be tied together off-chip.
2. Pads 5 & 6 may be tied together off-chip.
Description
Input; matched to 50 Ω; DC blocked
Gate Voltage; Bias network is required; see recommended
Application Information above.
Output; matched to 50 Ω; DC blocked
Drain voltage; Bias network is required; see recommended
Application Information above.
Preliminary Datasheet: 01-26-15
© 2014 TriQuint
- 11 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet TGA2214.PDF ] | |
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