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Número de pieza | MBR20200CA | |
Descripción | 20.0 Ampere Dual Common Anode Schottky Barrier Rectifiers | |
Fabricantes | Thinki Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MBR20200CA (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! MBR2035CA thru MBR20200CA
®
MBR2035CA thru MBR20200CA
Pb
Pb Free Plating Product
20.0 Ampere Dual Common Anode Schottky Barrier Rectifiers
Features
Plastic material used carries Underwriters Laboratory
Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
.038(0.96)
.019(0.50)
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.025(0.65)MAX
Mechanical Data
Cases: JEDEC TO-220AB molded plastic
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 2.1 gram approximately
.1(2.54)
.1(2.54)
Case
Positive
Common Cathode
Suffix "CT"
Case
Negative
Common Anode
Suffix "CA"
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Symbol
VRRM
VRMS
VDC
MBR
2035
CA
35
24
35
MBR
2045
CA
45
31
45
MBR
2050
CA
50
35
50
MBR
2060
CA
60
42
60
MBR
2090
CA
90
63
90
MBR MBR MBR
20100 20150 20200
CA CA CA
100 150 200
70 105 140
100 150 200
Maximum Average Forward Rectified Current
IF(AV)
20
Units
V
V
V
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz)
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at: (Note 2)
IF=10A, TA=25℃
IF=10A, TA=125℃
IF=20A, TA=25℃
IF=20A, TA=125℃
Maximum Instantaneous Reverse Current @ T A=25 ℃
at Rated DC Blocking Voltage
@ T A=125 ℃
Voltage Rate of Change (Rated V R)
Typical Junction Capacitance
Typical Thermal Resistance Per Leg
Operating Temperature Range
Storage Temperature Range
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
IFRM
IFSM
IRRM
VF
IR
dV/dt
Cj
RθJC
TJ
TSTG
20 A
150
1.0 0.5
A
A
- 0.80 0.85 0.99
0.57 0.70 0.75 0.87 V
0.84 0.95 0.95 1.23
0.72 0.85 0.85 1.10
0.1 mA
15 10
5 0.15 mA
10000
V/uS
400 320 pF
1.0 2.0 ℃/W
- 65 to + 150
℃
- 65 to + 175
℃
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MBR20200CA.PDF ] |
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