|
|
PDF DF2S6.8S Data sheet ( Hoja de datos )
| Número de pieza | DF2S6.8S | |
| Descripción | ESD Protection Diodes | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de DF2S6.8S (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF2S6.8S
DF2S6.8S
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
Unit: mm
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
z 2terminal ultra small package suitable for mounting on small space.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
Junction temperature
Storage temperature range
P
150*
mW
Tj 150 °C
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
⎯
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
JEITA
⎯
absolute maximum ratings.
TOSHIBA
1-1K1A
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Weight: 0.0011 g (typ.)
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Total capacitance
Symbol
VZ
ZZ
IR
CT
Test Condition
IZ = 5 mA
IZ = 5 mA
VR = 5 V
VR = 0 V, f = 1 MHz
Min Typ. Max Unit
6.4 6.8 7.2
V
― ― 30 Ω
― ― 0.5 μA
― 25 ― pF
Guaranteed Level of ESD Immunity
Marking
Equivalent Circuit (Top View)
Test Condition
ESD Immunity Level
IEC61000-4-2
(contact discharge)
±30 kV
Criterion: No damage to device elements
7
1 2007-11-01
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet DF2S6.8S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| DF2S6.8FS | ESD Protection Diodes | Toshiba Semiconductor |
| DF2S6.8S | Diodes for Protecting against ESD | Toshiba Semiconductor |
| DF2S6.8S | ESD Protection Diodes | Toshiba Semiconductor |
| DF2S6.8UCT | ESD Protection Diodes | Toshiba Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |