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Numéro de référence | DF2B7M2SL | ||
Description | ESD Protection Diodes | ||
Fabricant | Toshiba Semiconductor | ||
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1 Page
ESD Protection Diodes Silicon Epitaxial Planar
DF2B7M2SL
DF2B7M2SL
1. Applications
• ESD Protection
Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other
purpose, including, but not limited to, voltage regulation.
2. Packaging and Internal Circuit
1: Pin 1
2: Pin 2
SL2
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Note
Rating
Unit
Electrostatic discharge voltage (IEC61000-4-2)(Contact)
Electrostatic discharge voltage(IEC61000-4-2)(Air)
VESD
(Note 1)
±12
±15
kV
kV
Peak pulse power
Peak pulse current
Junction temperature
Storage temperature
PPK
IPP (Note 2)
Tj
Tstg
40
2
150
-55 to 150
W
A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: According to IEC61000-4-2.
Note 2: According to IEC61000-4-5.
Start of commercial production
2014-10
1 2015-04-02
Rev.4.0
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Pages | Pages 8 | ||
Télécharger | [ DF2B7M2SL ] |
No | Description détaillée | Fabricant |
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