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Toshiba Semiconductor - Photocouplers GaAs Infrared LED & Photo Triac

Numéro de référence TLP3083F
Description Photocouplers GaAs Infrared LED & Photo Triac
Fabricant Toshiba Semiconductor 
Logo Toshiba Semiconductor 





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TLP3083F fiche technique
Photocouplers GaAs Infrared LED & Photo Triac
TLP3083,TLP3083F
TLP3083,TLP3083F
1. Applications
• Solid-State Relays
• Triac Drivers
• Home Electric Appliances
• Office Equipment
2. General
The TLP3083 consists of a zero crossing photo triac, optically coupled to a gallium arsenide infrared emitting
diode. The TLP3083 is housed in the DIP6 package and guarantees insulation thickness of 0.4 mm (min). Therefore,
the TLP3083 meets the reinforced insulation class requirements of international safety standards.
3. Features
(1) Halogen-free
(2) Peak off-state voltage: 800 V (min)
(3) Zero crossing functionary (ZC)
(4) Trigger LED current: 5 mA (max)
(5) On-state current: 100 mA (max)
(6) Isolation voltage: 5000 Vrms (min)
(7) Safety standards
UL-approved: UL1577, File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1)
CQC-approved: GB4943.1, GB8898 Japan Factory
Note 1: When a VDE approved type is needed, please designate the Option (D4).
Table 3.1 Mechanical Parameters
Characteristics
Creepage distances
Clearance distances
Internal isolation thickness
7.62 mm Pitch
TLP3083
7.0 (min)
7.0 (min)
0.4 (min)
10.16 mm Pitch
TLP3083F
8.0 (min)
8.0 (min)
0.4 (min)
Unit
mm
©2016 Toshiba Corporation
1
Start of commercial production
2015-08
2016-02-03
Rev.5.0

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