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PDF TGM2635-CP Data sheet ( Hoja de datos )
| Número de pieza | TGM2635-CP | |
| Descripción | X-Band 100 W GaN Power Amplifier | |
| Fabricantes | TriQuint Semiconductor | |
| Logotipo |  |
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Applications
• X-band Radar
• Satellite Communications
• Data Links
TGM2635-CP
X-Band 100 W GaN Power Amplifier
Product Features
• Frequency Range: 7.9 – 11 GHz
• PSAT: > 50 dBm (PIN = 28 dBm)
• PAE: > 35% (PIN = 28 dBm)
• Large Signal Gain: > 22 dB (PIN = 28 dBm)
• Small Signal Gain: > 26 dB
• Bias: VD = 28 V, IDQ = 1.3 A, VG = -2.6 V Typical
• Package Dimensions: 19.05 x 19.05 x 4.52 mm
• Performance Under Pulsed Operation
Functional Block Diagram
General Description
Qorvo’s TGM2635–CP is a packaged X-band, high
power amplifier fabricated on Qorvo’s production 0.25um
GaN on SiC process. The TGM2635–CP operates from
7.9 – 11 GHz and provides 100 W of saturated output
power with 22.5 dB of large signal gain and greater than
35 % power–added efficiency.
The TGM2635-CP is packaged in a 10-lead 19.05 x
19.05 mm bolt-down package with a pure Cu base for
superior thermal management. Both RF ports are
internally DC blocked and matched to 50 ohms allowing
for simple system integration.
The TGM2635-CP is ideally suited for both military and
commercial X–Band radar systems, satellite
communications systems, and data links.
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Pad Configuration
Pad No.
1
2, 4, 7, 9
3
5
6
8
10
Symbol
VG1
GND
RF Input
VG2
VD2
RF Output
VD1
Ordering Information
Part
TGM2635-CP
ECCN
3A001.b.2.b
Description
X-band 100 W GaN
Power Amplifier
Datasheet: Rev - 11-30-15
© 2015 TriQuint
- 1 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
1 page  
TGM2635-CP
X-Band 100 W GaN Power Amplifier
Typical Performance: Small Signal (CW)
Test conditions unless otherwise noted: 25 °C , VD = 28 V
0 Input RL vs. Freq. vs. IDQ
VD = 28 V, T = 25 °C
-5
0 Input RL vs. Frequency vs. VD
IDQ = 1.3 A, T = 25 °C
-5
-10 -10
-15 -15
-20
-25 1.3 A
2.0 A
-30
6 7 8 9 10 11 12 13
Frequency (GHz)
-20
-25
-30
6
25 V
28 V
30 V
7
8 9 10 11
Frequency (GHz)
12
13
0 Output RL vs. Freq. vs. IDQ
VD = 28 V, T = 25 °C
-5
-10
-15
-20
-25 1.3 A
2.0 A
-30
6 7 8 9 10 11 12 13
Frequency (GHz)
0 Output RL vs. Frequency vs. VD
IDQ = 1.3 A, T = 25 °C
-5
-10
-15
-20
-25
-30
6
25 V
28 V
30 V
7
8 9 10 11
Frequency (GHz)
12
13
Datasheet: Rev - 11-30-15
© 2015 TriQuint
- 5 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
5 Page 
Evaluation Board and Mounting Detail
TGM2635-CP
X-Band 100 W GaN Power Amplifier
RF Layer is 0.008” thick Rogers Corp. RO40003C (εr = 3.35). Metal layers are 1.0 oz. copper. The microstrip line at
the connector interface is optimized for the Southwest Microwave end launch connector 1092-02A-5.
VG1 and VG2, and VD1 and VD2, respectively, can be tied together.
Reference Des. Component
C3, C6
Surface Mount Cap
C2, C5, C8, C11 Surface Mount Cap
Value
10 uF, ±20 %, 50 V (1206), X5R
0.1 uF, ±10 %, 50 V (0805), X7R
Manuf.
Various
Various
Part Number
Datasheet: Rev - 11-30-15
© 2015 TriQuint
- 11 of 14 -
Disclaimer: Subject to change without notice
www.triquint.com, www.qorvo.com
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet TGM2635-CP.PDF ] | |
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