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Número de pieza | ICE73N199 | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | Micross Components | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ICE73N199 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! ICE73N199
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge
High dv/dt Capability
High Unclamped Inductive Switching (UIS) Capability
High Peak Current Capability
Increased Transconductance Performance
Optimized Design For High Performance Power Systems
Product Summary
ID
V(BR)DSS
rDS(ON)
Qg
TA = 25°C
ID = 250uA
VGS = 10V
VDS = 480V
10A
730V
0.23Ω
62nC
Pin Description:
TO-220
G
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Symbol Parameter
Value
Unit Conditions
ID
ID, pulse
EAS
IAR
dv/dt
Continous Drain Current
Pulsed Drain Current
Avalanche Energy, Single Pulse
Avalanche Current, Repetitive
MOSFET dv/dt Ruggedness
VGS
Ptot
Tj, Tstg
Gate Source Voltage
Power Dissipation
Operating and Storage Temperature
Mounting Torque
10
31
280
7.5
50
±20
±30
208
-55 to +150
60
A
A
mJ
A
V/ns
V
W
°C
Ncm
TC = 25°C
TC = 25°C
ID = 7.5A
Limited by Tjmax
VDS = 480V, ID = 10A, Tj = 125°C
Static
AC (f>Hz)
TC = 25°C
M 3 & 3.5 screws
Max
Min
Typ
Typ
D
S
Symbol Parameter
Values
Min Typ Max
Unit Conditions
Thermal Characteristics
RthJC Thermal Resistance, Junction to Case
- - 0.7
RthJA Thermal Resistance, Junction to Ambient
- - 62
Tsold Soldering Temperature, Wave Soldering Only Al- - - 260
lowed At Leads
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS
VGS(th)
IDSS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
730 760 -
2.5 3 3.5
- 0.5 5
- - 100
IGSS
RDS(on)
Gate Source Leakage Current
Drain to Source On-State Resistance
- - 100
- 0.23 0.25
- 0.68 -
RGS Gate Resistance
- 4.3 -
°C/W
°C
Leaded
1.6mm (0.063in.) from Case for 10s
V VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
µA VDS = 730V, VGS = 0V, Tj = 25°C
VDS = 730V, VGS = 0V, Tj = 150°C
nA VGS = ±20v, VDS = 0V
Ω VGS = 10V, ID = 5A, Tj = 25°C
VGS = 10V, ID = 5A, Tj = 150°C
Ω f = 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected]
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet ICE73N199.PDF ] |
Número de pieza | Descripción | Fabricantes |
ICE73N199 | N-Channel Enhancement Mode MOSFET | Micross Components |
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