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PDF ICE60N160B Data sheet ( Hoja de datos )

Número de pieza ICE60N160B
Descripción N-Channel Enhancement Mode MOSFET
Fabricantes Micross Components 
Logotipo Micross Components Logotipo



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No Preview Available ! ICE60N160B Hoja de datos, Descripción, Manual

ICE60N160B
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge
High dv/dt Capability
High Unclamped Inductive Switching (UIS) Capability
High Peak Current Capability
Increased Transconductance Performance
Optimized Design For High Performance Power Systems
Product Summary
ID
V(BR)DSS
rDS(ON)
Qg
TA = 25°C
ID = 250uA
VGS = 10V
VDS = 480V
23.8A
650V
0.14Ω
85nC
Pin Description:
TO-263
G
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Symbol Parameter
Value
Unit Conditions
ID
ID, pulse
EAS
IAR
dv/dt
Continous Drain Current
Pulsed Drain Current
Avalanche Energy, Single Pulse
Avalanche Current, Repetitive
MOSFET dv/dt Ruggedness
VGS
Ptot
Tj, Tstg
Gate Source Voltage
Power Dissipation
Operating and Storage Temperature
23.8
72
690
6
50
±20
±30
208
-55 to +150
A TC = 25°C
A TC = 25°C
mJ ID = 6A
A Limited by Tjmax
V/ns VDS = 480V, ID = 23.8A, Tj = 125°C
Static
V
AC (f>Hz)
W TC = 25°C
°C
Max
Min
Typ
Typ
D
S
Symbol Parameter
Values
Min Typ Max
Thermal Characteristics
RthJC Thermal Resistance, Junction to Case
RthJA Thermal Resistance, Junction to Ambient
Tsold Soldering Temperature, Wave Soldering Only
Allowed At Leads
- - 0.6
- - 68
- - 260
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS
VGS(th)
IDSS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
650 675 -
2.5 3 3.5
- 0.1 1
- - 100
IGSS
RDS(on)
Gate Source Leakage Current
Drain to Source On-State Resistance
- - 100
- 0.14 0.16
- 0.42 -
RGS Gate Resistance
-4-
Unit Conditions
°C/W
°C
Leaded
1.6mm (0.063in.) from Case for 10s
V VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
µA VDS = 650V, VGS = 0V, Tj = 25°C
VDS = 650V, VGS = 0V, Tj = 150°C
nA VGS = ±20v, VDS = 0V
VGS = 10V, ID = 11.9A, Tj = 25°C
VGS = 10V, ID = 11.9, Tj = 150°C
f = 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected]
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