DataSheet39.com

What is ICE20N170?

This electronic component, produced by the manufacturer "Micross Components", performs the same function as "N-Channel Enhancement Mode MOSFET".


ICE20N170 Datasheet PDF - Micross Components

Part Number ICE20N170
Description N-Channel Enhancement Mode MOSFET
Manufacturers Micross Components 
Logo Micross Components Logo 


There is a preview and ICE20N170 download ( pdf file ) link at the bottom of this page.





Total 4 Pages



Preview 1 page

No Preview Available ! ICE20N170 datasheet, circuit

ICE20N170
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge
High dv/dt Capability
High Unclamped Inductive Switching (UIS) Capability
High Peak Current Capability
Increased Transconductance Performance
Optimized Design For High Performance Power Systems
Product Summary
ID
V(BR)DSS
rDS(ON)
Qg
TA = 25°C
ID = 250uA
VGS = 10V
VDS = 480V
20A
600V
0.17Ω
62nC
Pin Description:
TO-220
G
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Symbol Parameter
Value
Unit Conditions
ID
ID, pulse
EAS
IAR
dv/dt
Continous Drain Current
Pulsed Drain Current
Avalanche Energy, Single Pulse
Avalanche Current, Repetitive
MOSFET dv/dt Ruggedness
VGS
Ptot
Tj, Tstg
Gate Source Voltage
Power Dissipation
Operating and Storage Temperature
Mounting Torque
20
62
520
20
50
±20
±30
180
-55 to +150
60
A
A
mJ
A
V/ns
V
W
°C
Ncm
TC = 25°C
TC = 25°C
ID = 10A
Limited by Tjmax
VDS = 480V, ID = 20A, Tj = 125°C
Static
AC (f>Hz)
TC = 25°C
M 2.5 screws
Max
Min
Typ
Typ
D
S
Symbol Parameter
Values
Min Typ Max
Unit Conditions
Thermal Characteristics
RthJC Thermal Resistance, Junction to Case
RthJA Thermal Resistance, Junction to Ambient
Tsold Soldering Temperature, Wave Soldering Only
Allowed At Leads
-
-
-
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS
VGS(th)
IDSS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
600
2.1
-
-
IGSS
RDS(on)
Gate Source Leakage Current
Drain to Source On-State Resistance
-
-
-
RGS Gate Resistance
-
- 0.7
- 62
- 260
640 -
3 3.9
0.1 1
- 100
- 100
0.17 0.199
0.52 -
4.3 -
°C/W
°C
Leaded
1.6mm (0.063in.) from Case for 10s
V VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
µA VDS = 600V, VGS = 0V, Tj = 25°C
VDS = 600V, VGS = 0V, Tj = 150°C
nA VGS = ±20v, VDS = 0V
VGS = 10V, ID = 10A, Tj = 25°C
VGS = 10V, ID = 10A, Tj = 150°C
f = 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected]
1


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for ICE20N170 electronic component.


Information Total 4 Pages
Link URL [ Copy URL to Clipboard ]
Product Image
and Detail view

ICE20N170 image


1. - 600V, 20A, N-Ch, MOSFET

[ Learn More ]




Download [ ICE20N170.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
ICE20N170The function is N-Channel Enhancement Mode MOSFET. IcemosIcemos
ICE20N170The function is N-Channel Enhancement Mode MOSFET. Micross ComponentsMicross Components
ICE20N170BThe function is N-Channel Enhancement Mode MOSFET. IcemosIcemos

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

ICE2     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search