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NXP Semiconductors - PNP/PNP matched double transistors

Numéro de référence BCM856DG
Description PNP/PNP matched double transistors
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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BCM856DG fiche technique
BCM856BS; BCM856BS/DG
BCM856DS; BCM856DS/DG
PNP/PNP matched double transistors
Rev. 01 — 7 August 2008
Product data sheet
1. Product profile
1.1 General description
PNP/PNP matched double transistors in small Surface-Mounted Device (SMD) plastic
packages. The transistors are fully isolated internally.
Table 1. Product overview
Type number
Package
NXP
BCM856BS
SOT363
BCM856BS/DG
BCM856DS
SOT457
BCM856DS/DG
JEITA
SC-88
SC-74
Package configuration
very small
small
1.2 Features
I Current gain matching
I Base-emitter voltage matching
I Drop-in replacement for standard double transistors
I AEC-Q101 qualified
1.3 Applications
I Current mirror
I Differential amplifier
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per transistor
VCEO
IC
hFE
collector-emitter voltage
collector current
DC current gain
Conditions
open base
VCE = 5 V;
IC = 2 mA
Min Typ Max Unit
- - 65 V
- - 100 mA
200 290 450

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