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GDSSF2318E fiches techniques PDF

GOOD-ARK - MOSFET ( Transistor )

Numéro de référence GDSSF2318E
Description MOSFET ( Transistor )
Fabricant GOOD-ARK 
Logo GOOD-ARK 





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GDSSF2318E fiche technique
DESCRIPTION
The SSF2318E uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V.
GENERAL FEATURES
VDS = 20V,ID =6.5A
RDS(ON) < 34mΩ @ VGS=1.8V
RDS(ON) < 26mΩ @ VGS=2.5V
RDS(ON) < 22mΩ @ VGS=4.5V
ESD Rating2000V HBM
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
GDSSF2318E
Schematic diagram
Marking and pin Assignment
Application
Battery protection
Load switch
Power management
SOT-23 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2318E
SSF2318E
SOT-23
Ø330mm
Tape width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±8
6.5
30
1.4
-55 To 150
Unit
V
V
A
A
W
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
90 /W
Suzhou Goodark Electronics Co., Ltd
Version 1.0

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