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Numéro de référence | GDSSF2318E | ||
Description | MOSFET ( Transistor ) | ||
Fabricant | GOOD-ARK | ||
Logo | |||
DESCRIPTION
The SSF2318E uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V.
GENERAL FEATURES
● VDS = 20V,ID =6.5A
RDS(ON) < 34mΩ @ VGS=1.8V
RDS(ON) < 26mΩ @ VGS=2.5V
RDS(ON) < 22mΩ @ VGS=4.5V
ESD Rating:2000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
GDSSF2318E
Schematic diagram
Marking and pin Assignment
Application
●Battery protection
●Load switch
●Power management
SOT-23 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2318E
SSF2318E
SOT-23
Ø330mm
Tape width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±8
6.5
30
1.4
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
90 ℃/W
Suzhou Goodark Electronics Co., Ltd
Version 1.0
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Pages | Pages 4 | ||
Télécharger | [ GDSSF2318E ] |
No | Description détaillée | Fabricant |
GDSSF2318E | MOSFET ( Transistor ) | GOOD-ARK |
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