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MA-COM - GaN Wideband Transistor

Numéro de référence NPT2022
Description GaN Wideband Transistor
Fabricant MA-COM 
Logo MA-COM 





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NPT2022 fiche technique
NPT2022
GaN Wideband Transistor 48 V, 100 W
DC - 2 GHz
Features
GaN on Si HEMT D-Mode Transistor
Suitable for linear and saturated applications
Tunable from DC - 2 GHz
48 V Operation
20 dB Gain @ 900 MHz
60 % Drain Efficiency @ 900 MHz
100 % RF Tested
Standard plastic package with bolt down flange
RoHS* Compliant and 260°C reflow compatible
Description
The NPT2022 GaN HEMT is a wideband transistor
optimized for DC - 2 GHz operation. This device
supports CW, pulsed, and linear operation with
output power levels to 100 W (50 dBm) in an
industry standard plastic package.
The NPT2022 is ideally suited for defense
communications, land mobile radio, avionics,
wireless infrastructure, ISM applications and VHF/
UHF/L/S-band radar.
Built using the SIGANTIC® process - a proprietary
GaN-on-Silicon technology.
Functional Schematic
2
1
3
Rev. V1
Ordering Information
Part Number
NPT2022
NPT2022-SMBPPR
Package
Bulk Quantity
Sample Board
Pin Configuration
Pin No.
1
2
3
Pin Name
RFIN / VG
RFOUT / VD
Pad1
Function
RF Input / Gate
RF Output / Drain
Ground / Source
1. The exposed pad centered on the package bottom must be
connected to RF and DC ground. This path must also
provide a low thermal resistance heat path.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support

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