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PDF NPT2021 Data sheet ( Hoja de datos )
| Número de pieza | NPT2021 | |
| Descripción | GaN Wideband Transistor | |
| Fabricantes | MA-COM | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de NPT2021 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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NPT2021
GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Features
GaN on Si HEMT D-Mode Transistor
Suitable for linear and saturated applications
Tunable from DC - 2.5 GHz
48 V Operation
16.5 dB Gain at 2.5 GHz
55 % Drain Efficiency at 2.5 GHz
100 % RF Tested
TO-272 Package
RoHS* Compliant and 260°C reflow compatible
Description
The NPT2021 GaN HEMT is a wideband transistor
optimized for DC - 2.5 GHz operation. This device
supports CW, pulsed, and linear operation with
output power levels to 45 W in an industry standard
plastic package with bolt down flange.
The NPT2021 is ideally suited for defense
communications, land mobile radio, avionics,
wireless infrastructure, ISM applications and VHF/
UHF/L/S-band radar.
Built using the SIGANTIC® process - a proprietary
GaN-on-Silicon technology.
Functional Schematic
2
1
3
Rev. V1
Ordering Information
Part Number
NPT2021
NPT2021-SMBPPR
Package
Bulk Quantity
Sample Board
Pin Configuration
Pin No.
Pin Name
1 RFIN / VG
2 RFOUT / VD
3 Pad1
Function
RF Input / Gate
RF Output / Drain
Ground / Source
1. The exposed pad centered on the package bottom must be
connected to RF and DC ground. This path must also
provide a low thermal resistance heat path.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
1 page  
NPT2021
GaN Wideband Transistor 48 V, 45 W
DC - 2.5 GHz
Evaluation Board and Recommended Tuning Solution
2.5 GHz Narrowband Circuit
Rev. V1
VGS
C1
1.0 mF
C2
0.1 mF
C3
0.01 mF
C4
1000 pF
C9
10 pF
R1
24.9
C10
15 pF
R2
0
RF NPT2021
In
C13
0.5 pF
C14
3.0 pF
C11
18 pF
C12
18 pF
C8
1000pF
C7
0.01 mF
C6
0.1 mF
C5
1.0 mF
VDS
L1
22 nH
C15
2.4 pF
C16
0.5 pF
C17
2.4 pF
RF
Out
Description
Parts measured on evaluation board (30-mil thick
RO4350). The PCB’s electrical and thermal ground
is provided using a standard-plated densely packed
via hole array (see recommended via pattern).
Matching is provided using a combination of
lumped elements and transmission lines as shown
in the simplified schematic above. Recommended
tuning solution component placement, transmission
lines, and details are shown on the next page.
Bias Sequencing
Turning the device ON
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (48 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet NPT2021.PDF ] | |
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