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NPT2010 fiches techniques PDF

Nitronex - GaN HEMT

Numéro de référence NPT2010
Description GaN HEMT
Fabricant Nitronex 
Logo Nitronex 





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NPT2010 fiche technique
NPT2010
Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT
Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology
Features
Suitable for linear and saturated applications
Tunable from DC-2.2 GHz
48V Operation
Industry Standard Package
High Drain Efficiency (>60%)
Applications
Defense Communications
Land Mobile Radio
Avionics
Wireless Infrastructure
ISM Applications
VHF/UHF/L-Band Radar
DC-2.2 GHz
100W
GaN HEMT
Product Description
The NPT2010 GaN HEMT is a wideband transistor optimized for DC-2.2 GHz operation. This
device has been designed for CW, pulsed, and linear operation with output power levels to 100W
(50 dBm) in an industry standard metal-ceramic package with a bolt down flange.
RF Specifications (CW, 2.15 GHz): VDS = 48V, IDQ = 600mA, TC= 25°C
Symbol Parameter
Min
GSS Small-signal Gain
-
PSAT
Saturated Output Power
-
SAT Efficiency at Saturated Output Power
GP Gain at POUT = 95W
Drain Efficiency at POUT = 95W
-
13.5
52.5
VDS Drain Voltage
-
Ruggedness: Output Mismatch, all phase angles
Typ Max
17 -
Units
dB
50.5 - dBm
64 - %
15 - dB
61 - %
48 -
V
VSWR = 10:1, No Device Damage
Page 1
NDS-034 Rev. 1, 052413

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