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PDF KAI-04022-ABA Data sheet ( Hoja de datos )
| Número de pieza | KAI-04022-ABA | |
| Descripción | CCD IMAGE SENSOR | |
| Fabricantes | ON Semiconductor | |
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KAI-04022
2048 (H) x 2048 (V) Interline
CCD Image Sensor
Description
The KAI−04022 Image Sensor is a high-performance 4-million
pixel sensor designed for a wide range of medical, scientific and
machine vision applications. The 7.4 mm square pixels with
microlenses provide high sensitivity and the large full well capacity
results in high dynamic range. The two high-speed outputs and
binning capabilities allow for 16−50 frames per second (fps) video rate
for the progressively scanned images. The vertical overflow drain
structure provides anti-blooming protection and enables electronic
shuttering for precise exposure control. Other features include low
dark current, negligible lag and low smear.
Table 1. GENERAL SPECIFICATIONS
Parameter
Typical Value
Architecture
Total Number of Pixels
Number of Effective Pixels
Number of Active Pixels
Pixel Size
Active Image Size
Interline CCD, Progressive Scan
2112 (H) × 2072 (V)
2056 (H) × 2062 (V)
2048 (H) × 2048 (V)
7.4 mm (H) × 7.4 mm (V)
15.15 mm (H) × 15.15 mm (V),
21.43 mm (Diagonal),
4/3″ Optical Format
Aspect Ratio
Number of Outputs
Charge Capacity
Output Sensitivity
Peak Quantum Efficiency
KAI−04022−ABA
KAI−04022−FBA (BRG)
KAI−04022−CBA (BRG)
Read Noise (f = 10 MHz)
Dark Current
Dark Current Doubling Temp.
Dynamic Range
1:1
1 or 2
40,000 e−
33 mV/e−
50%
44%, 42%, 36%
45%, 42%, 35%
9 e−, rms
< 0.5 nA/cm2
7°C
72 dB
Charge Transfer Efficiency
> 0.999999
Blooming Suppression
300X
Smear
Image Lag
−80 dB
< 10 e−
Maximum Frame Rates
8 fps (Single Output)
16 fps (Single Output)
Package
34-pin, CERDIP
Cover Glass
AR Coated, 2-Side
NOTE: All Parameters are specified at T = 40°C unless otherwise noted.
www.onsemi.com
Figure 1. KAI−04022 Interline CCD
Image Sensor
Features
• High Resolution
• High Sensitivity
• High Dynamic Range
• Low Noise Architecture
• High Frame Rate
• Binning Capability for Higher Frame Rate
• Electronic Shutter
Applications
• Intelligent Transportation Systems
• Machine Vision
• Scientific Imaging
• Surveillance
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
August, 2015 − Rev. 2
1
Publication Order Number:
KAI−04022/D
1 page  
KAI−04022
Vertical to Horizontal Transfer
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Direction of
Horizontal
Charge Transfer
Figure 4. Vertical to Horizontal Transfer Architecture
When the V1 and V2 timing inputs are pulsed, charge in
every pixel of the VCCD is shifted one row towards the
HCCD. The last row next to the HCCD is shifted into the
HCCD. When the VCCD is shifted, the timing signals to the
HCCD must be stopped. H1 must be stopped in the high state
and H2 must be stopped in the low state. The HCCD
clocking may begin tHD ms after the falling edge of the V1
and V2 pulse.
Charge is transferred from the last vertical CCD phase into
the H1S horizontal CCD phase. Refer to Figure 36 for an
example of timing that accomplishes the vertical to
horizontal transfer of charge.
If the fast line dump is held at the high level (FDH) during
a vertical to horizontal transfer, then the entire line is
removed and not transferred into the horizontal register.
www.onsemi.com
5
5 Page 
KAI−04022
IMAGING PERFORMANCE
Table 5. TYPICAL OPERATIONAL CONDITIONS
(Unless otherwise noted, the Imaging Performance Specifications are measured using the following conditions.)
Description
Condition
Frame Time (Note 1)
538 ms
Horizontal Clock Frequency
10 MHz
Light Source (Notes 2, 3)
Continuous Red, Green and Blue LED Illumination Centered at 450, 530 and 650 nm
Operation
Nominal Operating Voltages and Timing
1. Electronic shutter is not used. Integration time equals frame time.
2. LEDs used: Blue: Nichia NLPB500, Green: Nichia NSPG500S and Red: HP HLMP−8115.
3. For monochrome sensor, only green LED used.
Specifications
Table 6. PERFORMANCE SPECIFICATIONS
Description
ALL CONFIGURATIONS
Dark Center Non-Uniformity
Dark Global Non-Uniformity
Global Non-Uniformity (Note 1)
Global Peak to Peak Non-Uniformity
(Note 1)
Center Non-Uniformity (Note 1)
Maximum Photoresponse Non-Linearity
(Notes 2, 3)
Maximum Gain Difference Between
Outputs (Notes 2, 3)
Max. Signal Error due to Non-Linearity Dif.
(Notes 2, 3)
Horizontal CCD Charge Capacity
Vertical CCD Charge Capacity
Photodiode Charge Capacity
Horizontal CCD Charge Transfer Efficiency
Vertical CCD Charge Transfer Efficiency
Photodiode Dark Current
Photodiode Dark Current
Vertical CCD Dark Current
Vertical CCD Dark Current
Image Lag
Anti-Blooming Factor
Vertical Smear
Read Noise (Note 4)
Dynamic Range (Notes 4, 5)
Output Amplifier DC Offset
Output Amplifier Bandwidth
Symbol
PRNU
NL
ΔG
ΔNL
HNe
VNe
PNe
HCTE
VCTE
IPD
IPD
IVD
IVD
Lag
XAB
Smr
ne−T
DR
VODC
f−3dB
Min.
N/A
N/A
N/A
N/A
N/A
N/A
N/A
N/A
−
50
38
0.99999
0.99999
N/A
N/A
N/A
N/A
N/A
100
N/A
−
−
4
−
Nom.
N/A
N/A
2.5
10
1.0
2
10
1
100
60
40
−
−
40
0.01
400
0.12
< 10
300
−80
9
72
8.5
140
Max.
Temperature
Sample
Tested at
Unit Plan
(5C)
2
5.0
5.0
20
2.0
−
−
−
−
−
−
N/A
N/A
350
0.1
1711
0.5
50
N/A
−75
−
−
14
−
mV rms
m Vpp
% rms
% pp
Die
Die
Die
Die
% rms
%
Die
Design
% Design
% Design
ke−
ke−
ke−
e−/p/s
nA/cm2
e−/p/s
nA/cm2
e−
Design
Die
Die
Design
Design
Die
Die
Die
Die
Design
dB
e− rms
dB
V
MHz
Design
Design
Die
Design
27, 40
27, 40
27, 40
27, 40
27, 40
www.onsemi.com
11
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| PDF Descargar | [ Datasheet KAI-04022-ABA.PDF ] | |
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