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PDF KAF-50100-AAA Data sheet ( Hoja de datos )
| Número de pieza | KAF-50100-AAA | |
| Descripción | CCD IMAGE SENSOR | |
| Fabricantes | ON Semiconductor | |
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KAF-50100
8176 (H) x 6132 (V) Full
Frame CCD Image Sensor
Description
The KAF−50100 Image Sensor is a high performance,
50-megapixel CCD. Based on the TRUESENSE 6.0 micron Full
Frame CCD Platform, the sensor features ultra-high resolution, broad
dynamic range, and a four-output architecture. A lateral overflow
drain suppresses image blooming, while an integrated Pulse Flush
Gate clears residual charge on the sensor with a single electrical pulse.
A Fast Dump Gate can be used to selectively remove a line of charge
to facilitate partial image readout. The sensor also utilizes the
TRUESENSE Transparent Gate Electrode to improve sensitivity
compared to the use of a standard front side illuminated polysilicon
electrode.
The sensor shares a common pin-out and electrical configuration
with the KAF−40000 Image Sensor, allowing a single camera design
to support both members of this sensor family.
Table 1. GENERAL SPECIFICATIONS
Parameter
Typical Value
Architecture
Total Number of Pixels
Number of Effective Pixels
Number of Active Pixels
Pixel Size
Active Image Size
Full Frame CCD (Square Pixels)
8304 (H) × 6220 (V) = 51.6 Mp
8208 (H) × 6164 (V) = 50.5 Mp
8176 (H) × 6132 (V) = 50.1 Mp
6.0 mm (H) × 6.0 mm (V)
49.1 mm (H) × 36.8 mm (V)
61.3 mm (Diagonal),
645 1.1x Optical Format
Aspect Ratio
4:3
Horizontal Outputs
Saturation Signal
Output Sensitivity
Quantum Efficiency
KAF−50100−CAA
KAF−50100−AAA
KAF−50100−ABA (with Lens)
Read Noise (f = 18 MHz)
Dark Signal (T = 60°C)
Dark Current Doubling Temperature
Dynamic Range (f = 18 MHz)
4
40.3 ke−
31 mV/e−
22%, 22%, 16% (Peak R, G, B)
25%
62%
12.5 e−
42 pA/cm2
5.7°C
70.2 dB
Estimated Linear Dynamic Range
(f = 18 MHz)
69.3 dB
Charge Transfer Efficiency
Horizontal
Vertical
0.999995
0.999999
Blooming Protection
(4 ms Exposure Time)
800X Saturation Exposure
Maximum Date Rate
18 MHz
Package
Ceramic PGA
Cover Glass
MAR Coated, 2 Sides
NOTE: All Parameters are specified at T = 40°C unless otherwise noted.
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 3
1
www.onsemi.com
Figure 1. KAF−50100 Full Frame CCD
Image Sensor
Features
• TRUESENSE Transparent Gate Electrode
for High Sensitivity
• Ultra-High Resolution
• Board Dynamic Range
• Low Noise Architecture
• Large Active Imaging Area
Applications
• Digitization
• Mapping/Aerial
• Photography
• Scientific
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Publication Order Number:
KAF−50100/D
1 page  
Output Load
KAF−50100
VDD = +15 V
IOUT = |5 mA|
VOUT
140 W
2N3904 or
Equivalent
1 kW
0.1 mF
Buffered
Video
Output
NOTE: Component values may be revised based on operating conditions and other design considerations.
Figure 4. Recommended Output Structure Load Diagram
www.onsemi.com
5
5 Page 
KAF−50100
KAF−50100−ABA Monochrome with Lens QE
70
60
50
40
30
20
10
0
350 400 450 500 550 600 650 700 750 800 850 900 950 1,000 1,050 1,100
Wavelength (nm)
Figure 9. Spectral Response (KAF−50100−ABA Version)
KAF−50100 Quantum Efficiency GR − GB Difference
1.2
1.0
0.8
0.6
0.4
0.2
0.0
−0.2
−0.4
−0.6
350 400 450 500 550 600 650 700 750 800 850 900 950 1,000 1,050 1,100
Wavelength (nm)
Figure 10. Typical GR − GB QE Difference (KAF−50100−CAA Version)
www.onsemi.com
11
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