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PDF KAF-40000 Data sheet ( Hoja de datos )
| Número de pieza | KAF-40000 | |
| Descripción | CCD IMAGE SENSOR | |
| Fabricantes | ON Semiconductor | |
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KAF-40000
7304 (H) x 5478 (V) Full
Frame CCD Image Sensor
Description
The KAF−40000 Image Sensor is a high performance,
40-megapixel CCD. Based on the TRUESENSE 6.0 micron Full
Frame CCD Platform, the sensor features ultra-high resolution, broad
dynamic range, and a four-output architecture. A lateral overflow
drain suppresses image blooming, while an integrated Pulse Flush
Gate clears residual charge on the sensor with a single electrical pulse.
A Fast Dump Gate can be used to selectively remove a line of charge
to facilitate partial image readout. The sensor also utilizes the
TRUESENSE Transparent Gate Electrode to improve sensitivity
compared to the use of a standard front side illuminated polysilicon
electrode.
The sensor shares a common pin-out and electrical configuration
with the KAF−50100 Image Sensor, allowing a single camera design
to support both members of this sensor family.
Table 1. GENERAL SPECIFICATIONS
Parameter
Typical Value
Architecture
Full Frame CCD (Square Pixels)
Total Number of Pixels
7410 (H) × 5566 (V) = 41.2 Mp
Number of Effective Pixels
7336 (H) × 5510 (V) = 40.4 Mp
Number of Active Pixels
7304 (H) × 5478 (V) = 40.0 Mp
Pixel Size
Active Image Size
6.0 mm (H) × 6.0 mm (V)
45.76 mm (H) × 35.34 mm (V)
54.78 mm (Diagonal),
645 1.3x Optical Format
Aspect Ratio
4:3
Horizontal Outputs
Saturation Signal
Output Sensitivity
4
42 ke−
31 mV/e−
Quantum Efficiency (Peak R, G, B)
Read Noise (f = 18 MHz)
Dark Signal (T = 60°C)
42%, 44%, 38%
13 e−
42 pA/cm2
Dark Current Doubling Temperature 5.5°C
Dynamic Range (f = 18 MHz)
70.2 dB
Estimated Linear Dynamic Range
(f = 18 MHz)
69.3 dB
Charge Transfer Efficiency
Horizontal
Vertical
0.999995
0.999999
Blooming Protection
(4 ms Exposure Time)
1400X Saturation Exposure
Maximum Date Rate
18 MHz
Package
Ceramic PGA
Cover Glass
MAR Coated, 2 Sides
NOTE: All Parameters are specified at T = 40°C unless otherwise noted.
© Semiconductor Components Industries, LLC, 2015
September, 2015 − Rev. 3
1
www.onsemi.com
Figure 1. KAF−40000 CCD Image Sensor
Features
• TRUESENSE Transparent Gate Electrode
for High Sensitivity
• Ultra-High Resolution
• Board Dynamic Range
• Low Noise Architecture
• Large Active Imaging Area
Application
• Digitization
• Mapping/Aerial
• Photography
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Publication Order Number:
KAF−40000/D
1 page  
Output Load
KAF−40000
VDD = +15 V
IOUT = |5 mA|
VOUT
140 W
2N3904 or
Equivalent
1 kW
0.1 mF
Buffered
Video
Output
NOTE: Component values may be revised based on operating conditions and other design considerations.
Figure 4. Recommended Output Structure Load Diagram
www.onsemi.com
5
5 Page 
KAF−40000
6000
KAF−40000 Anti-Blooming Performance
5000
4000
3000
2000
1000
0
0 5 10 15 20 25
Integration Time (ms)
Figure 9. Minimum Expected Anti-Blooming Performance
www.onsemi.com
11
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| Páginas | Total 26 Páginas | |
| PDF Descargar | [ Datasheet KAF-40000.PDF ] | |
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