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PDF 2SC6102 Data sheet ( Hoja de datos )
| Número de pieza | 2SC6102 | |
| Descripción | PNP / NPN Epitaxial Planar Silicon Transistors | |
| Fabricantes | ON Semiconductor | |
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2SA2197 / 2SC6102
Ordering number : ENA0463
2SA2197 / 2SC6102 PNP / NPN Epitaxial Planar Silicon Transistors
DC / DC Converter Applications
Applications
• Relay drivers, lamp drivers, motor drivers, flash.
Features
• Adoption of MBIT process.
• Large current capacitance.
• Low collector-to-emitter saturation voltage.
• High-speed switching.
• High allowable power dissipation.
Specifications ( ) : 2SA2197
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
Conditions
VCB=(--)30V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(--)500mA
VCE=(--)10V, IC=(--)500mA
VCB=(--)10V, f=1MHz
Ratings
(--30)40
(--)30
(--)6
(--)7
(--)9
(--)1.2
1
10
150
--55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
min
200
Ratings
typ
max
Unit
(--)0.1 µA
(--)0.1 µA
560
(250)290
MHz
(52)40
pF
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn5seImwiw.cwo.omnsemi.com
Publication Order Number:
2SA2197_2SC6102/D
1 page  
2SA2197 / 2SC6102
PC -- Tc
11
2SA2197 / 2SC6102
10
9
8
7
6
5
4
3
2
1
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT11481
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