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Datasheet THNCF192MBA-PDF.HTML Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category


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N.º Número de pieza Descripción Fabricantes Catagory
1THN405ZSiGe NPN Transistor

Semiconductor THN405Z SiGe NPN Transistor □ Applications - Low noise amplifier, oscillator and buffer amplifier up to 3 GHz SOT-343 Unit in mm □ Features - High gain bandwidth product fT = 17 GHz at VCE = 2 V, IC = 10 mA fT = 19 GHz at VCE = 3 V, IC = 15 mA - High power gain |S21|2 = 15 dB
AUK
AUK		transistor
2THN4201SiGe NPN Transistor

Semiconductor □ Application LNA and wide band amplifier up to GHz range THN4201 Series SiGe NPN Transistor SOT-523 Unit in mm □ Features o Low Noise Figure NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7 dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain MAG = 13.5 dB at f = 2 GHz, V
AUK
AUK		transistor
3THN4201ESiGe NPN Transistor

Semiconductor □ Application LNA and wide band amplifier up to GHz range THN4201 Series SiGe NPN Transistor SOT-523 Unit in mm □ Features o Low Noise Figure NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7 dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain MAG = 13.5 dB at f = 2 GHz, V
AUK
AUK		transistor
4THN4201USiGe NPN Transistor

Semiconductor □ Application LNA and wide band amplifier up to GHz range THN4201 Series SiGe NPN Transistor SOT-523 Unit in mm □ Features o Low Noise Figure NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7 dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain MAG = 13.5 dB at f = 2 GHz, V
AUK
AUK		transistor
5THN4201ZSiGe NPN Transistor

Semiconductor □ Application LNA and wide band amplifier up to GHz range THN4201 Series SiGe NPN Transistor SOT-523 Unit in mm □ Features o Low Noise Figure NF = 1.5 dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7 dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain MAG = 13.5 dB at f = 2 GHz, V
AUK
AUK		transistor
6THN420ZSiGe NPN Transistor

Semiconductor THN420Z SiGe NPN Transistor □ Applications - Low noise amplifier, oscillator and buffer amplifier up to 3 GHz SOT-343 Unit in mm □ Features - High gain bandwidth product fT = 17 GHz at VCE = 2 V, IC = 15 mA fT = 20 GHz at VCE = 3 V, IC = 30 mA - High power gain |S21|2 = 16 dB
AUK
AUK		transistor
7THN4301SiGe NPN Transistor

Semiconductor □ Application LNA and wide band amplifier up to GHz range □ Features o Low Noise Figure NF = 1.5dB at f = 2 GHz, VCE = 3 V, IC = 5 mA NF = 1.7dB at f = 2 GHz, VCE = 1 V, IC = 3 mA o High Gain MAG = 12.3 dB at f = 2 GHz, VCE = 3 V, IC = 25 mA MAG = 12.0 dB at f = 2 GHz, VCE = 1 V, I
AUK
AUK		transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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