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PDF FQPF6N80CT Data sheet ( Hoja de datos )
| Número de pieza | FQPF6N80CT | |
| Descripción | 800V N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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FQP6N80C / FQPF6N80C
N-Channel QFET® MOSFET
800 V, 5.5 A, 2.5 Ω
December 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
• 5.5 A, 800 V, RDS(on) = 2.5 Ω (Max.) @ VGS = 10 V,
ID = 2.75 A
• Low Gate Charge (Typ. 21 nC)
• Low Crss (Typ. 8 pF)
• 100% Avalanche Tested
D
GDS
TO-220
GDS
TO-220F
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
* Drain current limited by maximum junction temperature.
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink Typ, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQP6N80C
FQPF6N80C /
FQPF6N80CT
800
5.5 5.5 *
3.2 3.2 *
22 22 *
± 30
680
5.5
15.8
4.5
158 51
1.27 0.41
-55 to +150
300
FQP6N80C
0.79
0.5
62.5
FQPF6N80C /
FQPF6N80CT
2.45
--
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FQP6N80C / FQPF6N80C Rev. C1
1
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com
1 page  
Typical Characteristics (Continued)
100
D =0 .5
1 0 -1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
s in g le pu ls e
※ N o tes :
1 . Z θ J C( t ) = 0 . 7 9 ℃ / W M a x .
2 . D u ty F a c to r, D = t1/t2
3 . T J M - T C = P D M * Z θ J C( t )
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
101
Figure 11-1. Transient Thermal Response Curve for FQP6N80C
100 D =0 .5
0 .2
0 .1
1 0 -1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
sing le p u lse
※ N ote s :
1 . Z θ J C( t ) = 2 . 4 5 ℃ / W M a x .
2. D u ty F a cto r, D = t1/t2
3 . T J M - T C = P D M * Z θ J C( t )
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u ls e D u ra tio n [s e c ]
101
Figure 11-2. Transient Thermal Response Curve for FQPF6N80C
©2003 Fairchild Semiconductor Corporation
FQP6N80C / FQPF6N80C Rev. C1
5
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FQPF6N80CT.PDF ] | |
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