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PDF CGY81 Data sheet ( Hoja de datos )
| Número de pieza | CGY81 | |
| Descripción | GaAs MMIC (Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CGY81 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
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CGY 81
GaAs MMIC
l Tri mode power amplifier for AMPS/ CDMA /TDMA
portable cellular phones
l 31 dBm saturated output power @ PAE=55% typ.
29 dBm linear output power@ PAE=40% typ.
l Fully integrated 2 stage amplifier
l Power ramp control
l Input matched to 50 ohms, simple output match
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
CGY 81
Marking
CGY 81
Ordering code
(taped)
Q627002G0078
Package
MW 16
Maximum Ratings
Characteristics
Positive supply voltage
Supply current
Channel temperature
Storage temperature
Pulse peak power dissipation
Total power dissipation (Ts ≤ 80 °C)
Ts: Temperature at soldering point
Thermal Resistance
Characteristics
Channel-soldering point
Symbol
VD
ID
TCh
Tstg
PPulse
Ptot
max. Value
9
4
150
-55...+150
tbd
Tbd
Unit
V
A
°C
°C
W
W
Symbol
RthChS
max. Value
11
Unit
K/W
Siemens Aktiengesellschaft
Semiconductor Group
1
1
23.07.98
HL HF PE 1G9a9A8s-111/-F0o1
1 page  
CGY 81
Part Type
Capacitor
Inductor
Inductor
Inductor
Resistor
Resistor
Diode
Transistor
Substrate
Position
C14, C16
L1
L2
L3
R1
R2
V1
V2
Evaluation Board:
Description
33nF 0402
10uH
33nH Air Coil
8.2nH 0603
3.9k 0402
680 Ohm 0402
BAS40-04W
BC848B
FR4, h=0.2mm,
εr=4.5
Manufacturer
Siemens
Siemens
H. David GmbH
Siemens
Siemens
Siemens
Part Number
PN/BV 1250
CGY 81 Cell Band PA
Vd
L2
RFin
SIEMENS
RFout
V1
CLK
Vaux Vcon
CLK
Siemens Aktiengesellschaft
Semiconductor Group
5
5
23.07.98
HL HF PE 1G9a9A8s-111/-F0o1
5 Page 
CGY 81
TDMA Mode: Padj vs. f
Vd=4V, Pout=31dBm, Iq=300mA
35
34
33
32
31
30
29
28
27
26
25
820 825 830 835 840 845 850
f [MHz]
30
29
28
27
26
25
24
23
22
21
20
820
TDMA Mode: Gain vs. f
Vd=4V, Pout=31dBm, Iq=300mA
825 830 835 840 845
f [MHz]
850
TDMA Mode: Palt vs. f
Vd=4V, Pout=31dBm, Iq=300mA
55
54
53
52
51
50
49
48
47
46
45
820 825 830 835 840 845 850
f [MHz]
45
44
43
42
41
40
39
38
37
36
35
820
TDMA Mode: PAE vs. f
Vd=4V, Pout=31dBm, Iq=300mA
825 830 835 840 845
f [MHz]
850
Siemens Aktiengesellschaft
Semiconductor Group
11
11
23.07.98
HL HF PE 1G9a9A8s-111/-F0o1
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet CGY81.PDF ] | |
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