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Número de pieza | CGY196 | |
Descripción | GaAs MMIC (Broadband Power Amplifier [ 800..3500 Mhz ] DECT/PHS/PCS/GSM/AMPS/WLAN/WLL Single Voltage Supply) | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CGY196 (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
No Preview Available ! CGY 196
GaAs MMIC
Preliminary Data
l Broadband Power Amplifier [ 800..3500 Mhz ]
l DECT,PHS,PCS,GSM,AMPS,WLAN,WLL
l Single Voltage Supply
l Operating voltage range: 2.0to 6 V
l Pout = 25.5dBm at Vd=2.4V
l Pout = 27.0dBm at Vd=3.0V
l Pout = 30.0dBm at Vd=5.0V
l Overall power added efficiency up to 50 %
l Easy external matching
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
CGY 196
Marking
t.b.d.
Ordering code
(taped)
t.b.d.
Package
SCT598
Maximum ratings
Characteristics
Positive supply voltage
Supply current
Maximum input power
Channel temperature
Storage temperature
Total power dissipation (Ts < 81 °C)
Ts: Temperature at soldering point
Pulse peak power
Thermal Resistance
Characteristics
Channel-soldering point
Symbol
VD
ID
Pinmax
TCh
Tstg
Ptot
PPulse
max. Value
6
1.0
20
150
-55...+150
1.0
2.0
Unit
V
A
dBm
°C
°C
W
W
Symbol
RthChS
max. Value
70
Unit
K/W
Siemens Aktiengesellschaft
Semiconductor Group
1
1
16.6.1998
HL HF19P9E8-G11a-A0s1
1 page CGY 196
c) Reliability Considerations
This procedure yields the upper limit for the power dissipation for continuous wave (cw) and
pulse applications which corresponds to the maximum allowed channel temperature. For
best reliability keep the channel temperature low. The following formula allows to track the
individual contributions which determine the channel temperature.
Tch =
Channel temperature
junction temperature)
(=
( Pdiss x
RthChS ) +
Power dissipated in the chip. It Rth of device from channel to
does not contain decoupled RF- soldering point
power
TS
Temperature of soldering point,
measured or calculated
Siemens Aktiengesellschaft
Semiconductor Group
5
5
16.6.1998
HL HF19P9E8-G11a-A0s1
5 Page CGY 196
Electrical characteristics [2.4V DECT-Application: PCB-Layout see page 12]
(TA = 25°C , f=1.89 GHz, ZS=ZL=50 Ohm, unless otherwise specified)
Characteristics
Symbol min typ max
Unit
Supply current
VD=2.4V; Pin = +0 dBm
Supply current
VD=2.4V; Pin = -10 dBm
Output Power
VD=2.4V; Pin = 0 dBm
Overall Power added Efficiency
VD=2.4V; Pin = +0 dBm
Supply current
VD=2.2V; Pin = +0 dBm
Supply current
VD=2.2V; Pin = -10 dBm
Output Power
VD=2.2V; Pin = 0 dBm
Overall Power added Efficiency
VD=2.2V; Pin = +0 dBm
Supply current
VD=3.0V; Pin = +0 dBm
Supply current
VD=3.0V; Pin = -10 dBm
Output Power
VD=3.0V; Pin = 0 dBm
Overall Power added Efficiency
VD=3.0V; Pin = +0 dBm
Off Isolation
VD=0V; Pin = 0 dBm
Load mismatch
Pin=0dBm , VD≤3.6V , ZS=50 Ohm,
Load VSWR = 20:1 for all phase,
Load mismatch
Pin=3dBm , VD≤5.0V , ZS=50 Ohm,
Load VSWR = 20:1 for all phase,
Stability
Pin=0dBm, VD=3.6V, ZS=50 Ohm,
Load VSWR = 3:1 for all phase
Stability
Pin=3dBm , VD=5.0V , ZS=50 Ohm,
Load VSWR = 3:1 for all phase,
IDD
IDD
Po
PAE
IDD
IDD
Po
PAE
IDD
IDD
Po
PAE
-S21
-
-
-
-
- 360 -
- 450 -
25.7
44 -
- 350 -
- 450 -
25.1
42 -
- 370 -
- 450 -
27.0
44 -
34
No module damage
for 10 sec.
No module damage
for 10 sec.
All spurious output
more than 70 dB below
desired signal level
All spurious output
more than 70 dB below
desired signal level
mA
mA
dBm
%
mA
mA
dBm
%
mA
mA
dBm
%
dB
-
-
-
-
Siemens Aktiengesellschaft
Semiconductor Group
11
11
16.6.1998
HL HF19P9E8-G11a-A0s1
11 Page |
Páginas | Total 15 Páginas | |
PDF Descargar | [ Datasheet CGY196.PDF ] |
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CGY196 | GaAs MMIC (Broadband Power Amplifier [ 800..3500 Mhz ] DECT/PHS/PCS/GSM/AMPS/WLAN/WLL Single Voltage Supply) | Siemens Semiconductor Group |
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