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PDF SC1205H Data sheet ( Hoja de datos )
| Número de pieza | SC1205H | |
| Descripción | High Speed Syncronous Power MOSFET Driver | |
| Fabricantes | Semtech | |
| Logotipo |  |
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POWER MANAGEMENT
Description
The SC1205H is a cost effective, High Drive Voltage,
Dual MOS.ET Driver designed for switching High and Low
side Power MOS.ETs. Each driver is capable of Ultra-
fast rise/fall times as well as a 20ns max propagation
delay from input transition to the gate of the power .ETs.
An internal Overlap Protection circuit prevents shoot-
through from Vin to GND in the main and synchronous
MOS.ETs. The Adaptive Overlap Protection circuit en-
sures the Bottom .ET does not turn on until the Top .ET
source has reached a voltage low enough to prevent
cross-conduction.
Higher gate voltage drive capability of 8V (top and
bottom) optimally reduces Rds_on of power MOS.ETs
without excessive driver and .ET switching losses. The
high current drive capability (5A peak) allows fast switch-
ing, thus reducing switching losses at high (up to 1MHz)
frequencies without causing thermal stress on the driver.
The high voltage CMOS process allows operation from 5-
18 Volts at top MOS.ET drain, thus making SC1205H
suitable for battery powered applications. Connecting
Enable pin (EN) to logic low shuts down both drives and
reduces operating current to less than 10µA.
An under-voltage-lock-out and overtemperature shut-
down feature is included to guarantee proper and safe
operation. The SC1205H is offered in a standard SO-8
package.
Typical Application Circuit
Vin 5-12V
2.5m
SC1205H
High Speed Synchronous Power
MOS.ET Driver
PRELIMINARY
.eatures
K Higher efficiency (>90%)
K .ast rise and fall times (15ns typical with 3000pf
load)
KHigher gate drive voltage (8V) for optimum
MOS.ET RDS_ON at minimum switching loss
K Ultra-low (<20ns) propagation delay (BG going low)
K 5 Amp peak drive current
K Adaptive non-overlapping gate drives provide
shoot-through protection
K .loating top drive switches up to 18V
K Under-voltage lock-out
K Over-temperature shutdown
K Less than 10µA supply current when EN is low
K Low cost
Applications
K Intel PentiumTM power supplies
K AMD AthlonTM and K8TM power supplies
K High efficiency portable and notebook computers
K Battery powered applications
K High frequency (to 1.0 MHz) operation allows use
of small inductors and low cost caps in place of
electrolytics
2200uf 10u,CER
10nf 10 +8V
Rf
Ri
1 VID4
2 VID3
3 VID2
4 VID1
5
VID0
6 ERROUT
7 FB
8
RREF
VCC 16
BGOUT 15
OC+ 14
OUT1 13
12
OUT2
OC- 11
UVLO 10
9
GND
Rref
SC2422B
+8V
BST
TG
VS DRN
EN
BG
CO
SC1205H GND
70N03
70N03
+8V
BST
TG
VS DRN
EN
BG
CO
SC1205H GND
70N03
70N03
1.5V,40A
Revision 2, June 2002
1
www.semtech.com
1 page  
POWER MANAGEMENT
Pin Configuration
Top View
SC1205H
Ordering Information
PRELIMINARY
Device (1)
SC1205HSTR
Package
SO-8
Temp Range (TJ)
0° to 125°C
Note:
(1) Only available in tape and reel packaging. A reel
contains 2500 devices.
(SO-8)
Pin Descriptions
Pin #
1
2
3
4
5
6
7
8
Pin Name
DRN
TG
BST
CO
EN
VS
BG
PGND
Pin Function
This pin connects to the junction of the switching and synchronous MOSFETs . This pin
can be subjected to a -2V minimum relative to PGND without effecting operation.
Output gate drive for the switching (high-side) MOSFET.
Bootstrap pin. A capacitor is connected between BST and DRN pins to develop the
floating bootstrap voltage for the high-side MOSFET. The capacitor value is typically
between 0.1µF and 1µF (ceramic).
TTL-level input signal to the MOSFET drivers.
When high, this pin enables the internal circuitry of the device. When low, TG and BG
are forced low and the supply current (5V) is less than 10µA.
5V-9.0V supply. A .22-1µF ceramic capacitor should be connected from 5V to PGND
very close to this pin.
Output drive for the synchronous (bottom) MOSFET.
Ground. Keep this pin close to the synchronous MOSFETs source.
Note:
(1) All logic level inputs and outputs are open collector TTL compatible.
2002 Semtech Corp.
5
www.semtech.com
5 Page 
POWER MANAGEMENT
.igure 4: SC1205H driving a 3n. capacitive load. VCC = VBOOST = 8V.
SC1205H
PRELIMINARY
SC1205H
Timing Delay
Chan. 1 = Top gate
.all time
Chan. 2 = Bott. Gate rise time
Chan. 3 = CO pin going low
.igure 5: SC1205H driving a 3n. capacitive load. VCC = VBOOST = 8V.
SC1205H
Propagation Delay
Chan. 1 = Top gate
.all time
Chan. 3 = CO pin going low
2002 Semtech Corp.
11
www.semtech.com
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet SC1205H.PDF ] | |
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