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PDF TF2323 Data sheet ( Hoja de datos )
| Número de pieza | TF2323 | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | Tuofeng Semiconductor | |
| Logotipo |  |
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
P-Channel 20-V (D-S) MOSFET
TF2323
PRODUCT SUMMARY
VDS (V)
-20
rDS(on) (W)
0.043 @ VGS = -4.5 V
0.054 @ VGS = -2.5 V
0.075 @ VGS = -1.8 V
ID (A)
-4.0
- 4.0
- 2.0
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switch
D PA Switch
(SOT-23)
G1
S2
3D
Top View
TF2323 (D32TF)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-20
$8
Continuous Drain Current (TJ = 150_C)a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a, b
Maximum Power Dissipationa, b
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 25_C
ID
IDM
IS
PD
TJ, Tstg
-4.0
-20
-1.0 -0.6
1.25
0.75
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
1
Symbol
RthJA
RthJF
Typical
75
120
40
Maximum
100
166
50
Unit
_C/W
1 page  
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
TF2323
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10- 4
Single Pulse
10- 3
10- 2
10- 1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 120_C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet TF2323.PDF ] | |
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