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Número de pieza | TF2315 | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Tuofeng Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TF2315 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TF2315
G1
S2
Description
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a Power MOSFET with the industry's smallest
footprint. This package, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
Parameter
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
3D
Max.
-12
-4.3
-34
1.3
0.8
0.01
33
± 8.0
-55 to + 150
Units
V
A
W
W/°C
mJ
V
°C
Parameter
RθJA
Maximum Junction-to-Ambient
Typ.
75
Max.
100
Units
°C/W
1 page Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TF2315
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
80 ID
TOP
-1.9A
-3.4A
BOTTOM -4.3A
60
40
20
0
25 50 75 100 125 150
Starting TJ , Junction Temperature ( °C)
1000
100
D = 0.50
0.20
10 0.10
0.05
0.02
0.01
1
0.1
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
10
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet TF2315.PDF ] |
Número de pieza | Descripción | Fabricantes |
TF2310 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Tuofeng Semiconductor |
TF2312 | MOSFET ( Transistor ) | Tuofeng Semiconductor |
TF2314 | N-Channel MOSFET | Tuofeng Semiconductor |
TF2315 | MOSFET ( Transistor ) | Tuofeng Semiconductor |
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