DataSheetWiki


TF2312 fiches techniques PDF

Tuofeng Semiconductor - MOSFET ( Transistor )

Numéro de référence TF2312
Description MOSFET ( Transistor )
Fabricant Tuofeng Semiconductor 
Logo Tuofeng Semiconductor 





1 Page

No Preview Available !





TF2312 fiche technique
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TF2312
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.031 @ VGS = 4.5 V
0.037 @ VGS = 2.5 V
0.047 @ VGS = 1.8 V
ID (A)
5.0
4.6
4.1
Qg (Typ)
7.5
(SOT-23)
G1
S2
3D
Top View
Ordering Information: TF2312
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
20
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Currentb
Avalanche Currentb
Single Avalanche Energy
Continuous Source Current (Diode Conduction)a
TA= 25_C
L = 0.1 mH
ID
IDM
IAS
EAS
IS
5.0 3.9
15
13
8.45
1.0 0.63
Power Dissipationa
TA= 25_C
PD
1.25
0.75
Operating Junction and Storage Temperature Range
TJ, Tstg
55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
80
120
50
Maximum
100
166
60
Unit
V
A
mJ
A
W
_C
Unit
_C/W

PagesPages 4
Télécharger [ TF2312 ]


Fiche technique recommandé

No Description détaillée Fabricant
TF2310 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Tuofeng Semiconductor
Tuofeng Semiconductor
TF2312 MOSFET ( Transistor ) Tuofeng Semiconductor
Tuofeng Semiconductor
TF2314 N-Channel MOSFET Tuofeng Semiconductor
Tuofeng Semiconductor
TF2315 MOSFET ( Transistor ) Tuofeng Semiconductor
Tuofeng Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche