DataSheetWiki


TF2305B fiches techniques PDF

Tuofeng Semiconductor - P-Channel MOSFET

Numéro de référence TF2305B
Description P-Channel MOSFET
Fabricant Tuofeng Semiconductor 
Logo Tuofeng Semiconductor 





1 Page

No Preview Available !





TF2305B fiche technique
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
P-Channel 1.25-W, 1.8-V (G-S) MOSFET
TF2305B
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
- 16 0.060 at VGS = - 4.5 V
0.080 at VGS = - 2.5 V
ID (A)
-3.0
-2.0
(SOT-23)
G1
S2
3D
Top View
TF2305B
FEATURES
Power MOSFETs: 1.8 V Rated
Pb-free
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TA = 25 °C
ID
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a, b
IDM
IS
Maximum Power Dissipationa, b
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
- 16
± 12
-3.5
± 12
- 1.6
1.25
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes:
a. Surface Mounted on FR4 Board.
b. t 5 sec.
t 5 sec
Steady State
Symbol
RthJA
Typical
130
Maximum
100
Unit
°C/W
1

PagesPages 4
Télécharger [ TF2305B ]


Fiche technique recommandé

No Description détaillée Fabricant
TF2305B P-Channel MOSFET Tuofeng Semiconductor
Tuofeng Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche