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Numéro de référence | TF2300 | ||
Description | N-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | Tuofeng Semiconductor | ||
Logo | |||
SMD TySpheenzhen Tuofeng Semiconductor TechnologyMCOoS., FLIEtCdT
N-Channel Enhancement Mode Field Effect Transistor
TF2300
Features
VDS=20V,RDS(ON)=30m @VGS=10V,ID=6.0A
VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=3.0A
VDS=20V,,RDS(ON)=55m @VGS=2.5V,ID=2.0A
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
11..BGasae te
22.ESmoituterrce
33..cDollreactionr
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Current -Continuous * TJ=125
-Pulsed
Power Dissipation *
Thermal Resistance,Junction- to-Ambient
Operating Junction and Storage Temperature Range
* Surface Mounted on FR 4 Board ,t 10 sec.
Symbol
VDS
VGS
ID
IDM
PD
RthJA
Tj.Tstg
Rating
20
10
6.0
20
1.25
100
-55 to 150
Unit
V
V
A
A
W
/W
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Pages | Pages 5 | ||
Télécharger | [ TF2300 ] |
No | Description détaillée | Fabricant |
TF2300 | N-Channel Enhancement Mode Field Effect Transistor | Tuofeng Semiconductor |
TF2301 | P-Channel MOSFET | Tuofeng Semiconductor |
TF2301A | P-Channel MOSFET | Tuofeng Semiconductor |
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