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PDF A733 Data sheet ( Hoja de datos )
| Número de pieza | A733 | |
| Descripción | PNP Transistor | |
| Fabricantes | Tuofeng Semiconductor | |
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
TO-92 Plastic-Encapsulate Transistors
A733 TRANSISTOR(PNP )
TO-92
FEATURE
Power dissipation
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Junction Temperature
Junction and Storage Temperature
Value
-60
-50
-5
-100
250
150
-55-150
Units
V
V
V
mA
mW
℃
℃
1. EMITTER
2. COLLECTOR
3. BASE
123
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
Cob
NF
Test conditions
IC= -50uA,IE=0
IC= -1mA , IB=0
IE= -50uA, IC=0
VCB= -60 V , IE=0
VEB= -5 V , IC=0
VCE= -6 V, IC= -1mA
IC= -100mA, IB=- 10mA
VCE=-6V,IC=-1.0mA
VCE=-6V,IC=-10mA
VCB=-10V,IE=0,f=1MHZ
VCE=-6V,IC=-0.3mA,
Rg=10kΩ,f=100HZ
MIN
-60
-50
-5
90
-0.58
100
TYP
200
-0.18
-0.62
180
4.5
MAX UNIT
V
V
V
-0.1 uA
-0.1 uA
600
-0.3 V
-0.68 V
MHz
6 pF
6 20 dB
CLASSIFICATION OF hFE
Rank
Range
R
90-180
Q
135-270
P
200-400
K
300-600
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet A733.PDF ] | |
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