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Inchange Semiconductor - MOSFET ( Transistor ) - 2SK1938

Numéro de référence K1938
Description MOSFET ( Transistor ) - 2SK1938
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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K1938 fiche technique
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1938
DESCRIPTION
·Drain Current ID=18A@ TC=25
·Drain Source Voltage-
: VDSS=500V(Min)
·Fast Switching Speed
APPLICATIONS
·Switching regulator
·UPS
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
500 V
VGS Gate-Source Voltage
±30
V
ID Drain Current-continuous@ TC=2518 A
Ptot Total Dissipation@TC=25
100 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.25 /W
30 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

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