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Numéro de référence | K1938 | ||
Description | MOSFET ( Transistor ) - 2SK1938 | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1938
DESCRIPTION
·Drain Current –ID=18A@ TC=25℃
·Drain Source Voltage-
: VDSS=500V(Min)
·Fast Switching Speed
APPLICATIONS
·Switching regulator
·UPS
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
500 V
VGS Gate-Source Voltage
±30
V
ID Drain Current-continuous@ TC=25℃ 18 A
Ptot Total Dissipation@TC=25℃
100 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.25 ℃/W
30 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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Pages | Pages 2 | ||
Télécharger | [ K1938 ] |
No | Description détaillée | Fabricant |
K193 | N-Channel FET (2SK193) | NEC |
K1930 | MOSFET ( Transistor ) - 2SK1930 | Toshiba Semiconductor |
K1933 | MOSFET ( Transistor ) - 2SK1933 | Hitachi Semiconductor |
K1938 | MOSFET ( Transistor ) - 2SK1938 | Inchange Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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