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Numéro de référence | S8205A | ||
Description | Dual N-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | Tuofeng Semiconductor | ||
Logo | |||
1 Page
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SMD Type
N MMOOSFSEFTET
Dual N-Channel Enhancement Mode Field Effect Transistor
S8205A
Features
5A,20V.rDS(on) = 0.025 @ VGS = 4.5 V
rDS(on) = 0.040 @ VGS = 2.5 V.
TSSOP-8
Unit: mm
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation TA = 25
TA = 70
Thermal Resistance,Junction-to-Ambient
Thermal Resistance,Junction-to-Case
Jumction temperature and Storage temperature
Symbol
VDS
VGS
ID
IDM
PD
R JA
R JC
Tj.Tstg
Rating
20
8
5
20
2.0
1.6
78
40
-55 to +150
Unit
V
V
A
A
W
W
/W
/W
1
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Pages | Pages 2 | ||
Télécharger | [ S8205A ] |
No | Description détaillée | Fabricant |
S8205 | Diode ( Rectifier ) | American Microsemiconductor |
S8205A | Dual N-Channel Enhancement Mode Field Effect Transistor | Tuofeng Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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