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Tuofeng Semiconductor - Dual N-Channel MOSFET

Numéro de référence 9926B
Description Dual N-Channel MOSFET
Fabricant Tuofeng Semiconductor 
Logo Tuofeng Semiconductor 





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9926B fiche technique
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SMD Type
MOSFET
Dual N-Channel MOSFET
9926B
Features
6.5A, 20 V. rDS(on) = 0.022 @ VGS = 4.5 V
5.5A, 20 V rDS(on) = 0.035 @ VGS = 2.5 V.
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Ta=25
Pulsed Drain Current
Maximum Power Dissipation
TA = 25
TA = 70
Symbol
VDS
VGS
ID
IDM
PD
10 secs
Steady Sate
20
10
6.5
30
2.0 1.25
1.3 0.8
Unit
V
V
A
A
W
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient*
Maximum Junction-to-Foot (Drain)
t 10 sec
Steady State
Steady State
* Surface Mounted on 1" X 1"FR4 Board.
Symbol
RthJA
RthJF
Typ
50
80
30
Max Unit
62.5
100 /W
40

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