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Tuofeng Semiconductor - MOSFET ( Transistor )

Numéro de référence 4616
Description MOSFET ( Transistor )
Fabricant Tuofeng Semiconductor 
Logo Tuofeng Semiconductor 





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4616 fiche technique
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4616
Product Summary
N-Channel
VDS= 30V
ID= 8A (VGS=10V)
RDS(ON)
< 20m(VGS=10V)
< 28m(VGS=4.5V)
P-Channel
-30V
-7A (VGS=-10V)
RDS(ON)
< 22m(VGS=-10V)
< 40m(VGS=-4.5V)
SOIC-8
D2 D1
Top View
S2 D2
G2 D2
S1 D1
G1 D1
G2
G1
S2 S1
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol Max n-channel
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain
Current
TA=25°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM
IAS, IAR
EAS, EAR
8
40
19
18
Max p-channel
-30
±20
-7
-40
27
36
Units
V
V
A
A
mJ
Power Dissipation B TA=25°C
Junction and Storage Temperature Range
PD
TJ, TSTG
22
-55 to 150
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
32
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
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