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Numéro de référence | 4616 | ||
Description | MOSFET ( Transistor ) | ||
Fabricant | Tuofeng Semiconductor | ||
Logo | |||
1 Page
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4616
Product Summary
N-Channel
VDS= 30V
ID= 8A (VGS=10V)
RDS(ON)
< 20mΩ (VGS=10V)
< 28mΩ (VGS=4.5V)
P-Channel
-30V
-7A (VGS=-10V)
RDS(ON)
< 22mΩ (VGS=-10V)
< 40mΩ (VGS=-4.5V)
SOIC-8
D2 D1
Top View
S2 D2
G2 D2
S1 D1
G1 D1
G2
G1
S2 S1
n-channel
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol Max n-channel
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain
Current
TA=25°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM
IAS, IAR
EAS, EAR
8
40
19
18
Max p-channel
-30
±20
-7
-40
27
36
Units
V
V
A
A
mJ
Power Dissipation B TA=25°C
Junction and Storage Temperature Range
PD
TJ, TSTG
22
-55 to 150
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
32
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
Page 1 of 9
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Pages | Pages 9 | ||
Télécharger | [ 4616 ] |
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