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Tuofeng Semiconductor - P-Channel Enhancement Mode Field Effect Transistor

Numéro de référence 4835
Description P-Channel Enhancement Mode Field Effect Transistor
Fabricant Tuofeng Semiconductor 
Logo Tuofeng Semiconductor 





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4835 fiche technique
Shenzhen Tuofeng Semiconductor Technology co., LTD
4835
P-Channel Enhancement Mode MOSFET
Features
Pin Description
-30V/-8A, RDS(ON) = 16m(typ.) @ VGS = -10V
RDS(ON) = 24m(typ.) @ VGS = -4.5V
Super High Density Cell Design
Reliable and Rugged
SO-8 Package
Applications
S1
S2
S3
G4
8D
7D
6D
5D
SO 8
S SS
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
G
DD DD
P-Channel MOSFET
Absolute Maximum Ratings
(T
A
=
25°C
unless
otherwise
noted)
Symbol
Parameter
Rating
Unit
VDSS
VGSS
ID*
IDM
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current – Continuous TA = 25°C
Maximum Drain Current – Pulsed
-30
V
±25
-8
A
-50
*Surface Mounted on FR4 Board, t 10 sec.
TF reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
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