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PDF 4612 Data sheet ( Hoja de datos )
| Número de pieza | 4612 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Tuofeng Semiconductor | |
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4612
Features
n-channel
VDS (V) = 60V
ID = 4.5A (VGS=10V)
RDS(ON)
< 55mΩ (VGS=10V)
< 60mΩ (VGS=4.5V)
p-channel
-60V
-3.2A (VGS = -10V)
RDS(ON)
< 80m Ω (VGS = -10V)
< 95m Ω (VGS = -4.5V)
D2 D1
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
G2
S2
n-channel
G1
S1
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS 60
Gate-Source Voltage
VGS ±20
Continuous Drain
Current A
TA=25°C
ID
4.5
Pulsed Drain Current B
IDM 20
Max p-channel
-60
±20
-3.2
-20
Units
V
V
A
Power Dissipation
TA=25°C
PD
Junction and Storage Temperature Range TJ, TSTG
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
t ≤ 10s
Steady-State
Steady-State
2
-55 to 150
Symbol
RθJA
RθJL
RθJA
RθJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
2
-55 to 150
W
°C
Typ Max Units
48 62.5 °C/W
74 110 °C/W
35 60 °C/W
48 62.5 °C/W
74 110 °C/W
35 40 °C/W
1 page  
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4612
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
Conditions
ID=-250µA, VGS=0V
Min Typ Max Units
-60 V
IDSS
IGSS
VGS(th)
ID(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=-48V, VGS=0V
VDS=0V, VGS=±20V
VDS=VGS ID=-250µA
VGS=-10V, VDS=-5V
-1 µA
±100 nA
-1 -2.1 -3
V
-20 A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=-10V, ID=-3.2A
VGS=-4.5V, ID=-2.8A
Forward Transconductance
VDS=-5V, ID=-3.2A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Qgs Gate Source Charge
VGS=-10V, VDS=-30V, ID=-3.2A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=-10V, VDS=-30V, RL=9.4Ω,
tD(off)
Turn-Off DelayTime
RGEN=3Ω
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=-3.2A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=-3.2A, dI/dt=100A/µs
75
85
9
-0.73
80
90
-1
-3
mΩ
mΩ
S
V
A
930 1120
85
35
7.2 9
pF
pF
pF
Ω
16 20
8 10
2.5
3.2
8 12
3.8 7.5
31.5 48
7.5 15
27 35
32
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any ggiviveennaapppplilcicaattioionnddeeppeennddssoonntthheeuusseerr's'sssppeeccifificicbbooaarrddddeessigignn..TThheeccuurrreennttrraattininggisisbbaasseeddoonntthheett≤≤1100ssththeerrmmaallrreessisistatannccee
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
SOA curve provides a single pulse rating. Rev2: August 2005
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 4612.PDF ] | |
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