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CFY35-23 fiches techniques PDF

Siemens Semiconductor Group - GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters)

Numéro de référence CFY35-23
Description GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters)
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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CFY35-23 fiche technique
GaAs FET
CFY 35
________________________________________________________________________________________________________
Datasheet
* Low noise
* High gain
* For low-noise front end amplifiers
* For DBS down converters
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(tape and reel)
Pin Configuration
1234
CFY 35-20 NA Q62702-F1393 S D S G
CFY 35-23 NB Q62702-F1394
Package 1)
MW-4
Maximum ratings
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
Channel temperature
Storage temperature range
Total power dissipation (TS < 53°C) 2)
Symbol
VDS
VDG
VGS
ID
TCh
Tstg
Ptot
Value
5
6
-4 ... 0
60
150
-40...+150
180
Thermal resistance
Channel-soldering point 2)
RthChS
540
1) Dimensions see chapter Package Outlines
2) TS is measured on the source 1 lead at the soldering point to the PCB.
Unit
V
V
V
mA
°C
°C
mW
K/W
Siemens Aktiengesellschaft
pg. 1/4
13.02.1996
HL EH PD 21

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