|
|
Numéro de référence | CFY35-20 | ||
Description | GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) | ||
Fabricant | Siemens Semiconductor Group | ||
Logo | |||
1 Page
GaAs FET
CFY 35
________________________________________________________________________________________________________
Datasheet
* Low noise
* High gain
* For low-noise front end amplifiers
* For DBS down converters
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(tape and reel)
Pin Configuration
1234
CFY 35-20 NA Q62702-F1393 S D S G
CFY 35-23 NB Q62702-F1394
Package 1)
MW-4
Maximum ratings
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
Channel temperature
Storage temperature range
Total power dissipation (TS < 53°C) 2)
Symbol
VDS
VDG
VGS
ID
TCh
Tstg
Ptot
Value
5
6
-4 ... 0
60
150
-40...+150
180
Thermal resistance
Channel-soldering point 2)
RthChS
540
1) Dimensions see chapter Package Outlines
2) TS is measured on the source 1 lead at the soldering point to the PCB.
Unit
V
V
V
mA
°C
°C
mW
K/W
Siemens Aktiengesellschaft
pg. 1/4
13.02.1996
HL EH PD 21
|
|||
Pages | Pages 4 | ||
Télécharger | [ CFY35-20 ] |
No | Description détaillée | Fabricant |
CFY35-20 | GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) | Siemens Semiconductor Group |
CFY35-23 | GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters) | Siemens Semiconductor Group |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |